Novel Highly-Linear Imprint Nanowire FET

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-10-C-0052
Agency Tracking Number: 09SB2-0251
Amount: $98,964.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2009
Solicitation Topic Code: SB092-011
Solicitation Number: 2009.2
Small Business Information
6201 East Oltorf St., Suite 400, Austin, TX, 78741
DUNS: 100651798
HUBZone Owned: Y
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Andrew Milder
 Principal Scientist
 (512) 389-9990
Business Contact
 Keith Jamison
Title: President
Phone: (512) 389-9990
Research Institution
Nanohmics proposes to design a nanowire-based FET (NWFET) around an advanced nanolithographic imprint methodology which will lead to a scalable and economically competitive manufacturing process. The NWFET will consist of Si nanowires etched from an epitaxially deposited single crystal layer of Si, followed by silicon dioxide dielectric, then the gate, source, and drain structures. As opposed to other construction methodologies, this device will employ a very high density of current carrying nanowires for increased power density and reduced bias voltage requirements. Advanced modeling techniques will be used to optimize the linearity, power consumption, and bandwidth.

* Information listed above is at the time of submission. *

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