Novel Highly-Linear Imprint Nanowire FET

Award Information
Agency:
Department of Defense
Amount:
$98,964.00
Program:
SBIR
Contract:
W31P4Q-10-C-0052
Solitcitation Year:
2009
Solicitation Number:
2009.2
Branch:
Defense Advanced Research Projects Agency
Award Year:
2009
Phase:
Phase I
Agency Tracking Number:
09SB2-0251
Solicitation Topic Code:
SB092-011
Small Business Information
Nanohmics, Inc
6201 East Oltorf St., Suite 400, Austin, TX, 78741
Hubzone Owned:
Y
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
100651798
Principal Investigator
 Andrew Milder
 Principal Scientist
 (512) 389-9990
 amilder@nanohmics.com
Business Contact
 Keith Jamison
Title: President
Phone: (512) 389-9990
Email: kjamison@nanohmics.com
Research Institution
N/A
Abstract
Nanohmics proposes to design a nanowire-based FET (NWFET) around an advanced nanolithographic imprint methodology which will lead to a scalable and economically competitive manufacturing process. The NWFET will consist of Si nanowires etched from an epitaxially deposited single crystal layer of Si, followed by silicon dioxide dielectric, then the gate, source, and drain structures. As opposed to other construction methodologies, this device will employ a very high density of current carrying nanowires for increased power density and reduced bias voltage requirements. Advanced modeling techniques will be used to optimize the linearity, power consumption, and bandwidth.

* information listed above is at the time of submission.

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