- Award Details
Novel Highly-Linear Imprint Nanowire FET
Department of Defense
Defense Advanced Research Projects Agency
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Small Business Information
6201 East Oltorf St., Suite 400, Austin, TX, 78741
Socially and Economically Disadvantaged:
AbstractNanohmics proposes to design a nanowire-based FET (NWFET) around an advanced nanolithographic imprint methodology which will lead to a scalable and economically competitive manufacturing process. The NWFET will consist of Si nanowires etched from an epitaxially deposited single crystal layer of Si, followed by silicon dioxide dielectric, then the gate, source, and drain structures. As opposed to other construction methodologies, this device will employ a very high density of current carrying nanowires for increased power density and reduced bias voltage requirements. Advanced modeling techniques will be used to optimize the linearity, power consumption, and bandwidth.
* information listed above is at the time of submission.