Novel Highly-Linear Imprint Nanowire FET

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$98,964.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
W31P4Q-10-C-0052
Agency Tracking Number:
09SB2-0251
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
NANOHMICS, INC.
6201 East Oltorf St., Suite 400, Austin, TX, 78741
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
100651798
Principal Investigator:
Andrew Milder
Principal Scientist
(512) 389-9990
amilder@nanohmics.com
Business Contact:
Keith Jamison
President
(512) 389-9990
kjamison@nanohmics.com
Research Institution:
n/a
Abstract
Nanohmics proposes to design a nanowire-based FET (NWFET) around an advanced nanolithographic imprint methodology which will lead to a scalable and economically competitive manufacturing process. The NWFET will consist of Si nanowires etched from an epitaxially deposited single crystal layer of Si, followed by silicon dioxide dielectric, then the gate, source, and drain structures. As opposed to other construction methodologies, this device will employ a very high density of current carrying nanowires for increased power density and reduced bias voltage requirements. Advanced modeling techniques will be used to optimize the linearity, power consumption, and bandwidth.

* information listed above is at the time of submission.

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