Advanced Infrared (IR) Sensor Components for Missile Defense

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-06-C-7518
Agency Tracking Number: B064-011-0081
Amount: $100,000.00
Phase: Phase I
Program: STTR
Awards Year: 2006
Solicitation Year: 2006
Solicitation Topic Code: MDA06-T011
Solicitation Number: N/A
Small Business Information
4625 Timberidge Circle, Norman, OK, 73072
DUNS: 144959942
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Zhisheng Shi
 (405) 579-5662
Business Contact
 Zhisheng Shi
Title: President
Phone: (405) 579-5662
Research Institution
 Zhisheng Shi
 202 W Boyd, CEC Rm 219
Norman, OK, 73019
 (405) 325-4292
 Nonprofit college or university
The objective of this proposal is to further explore PbSnSe detector array on Si substrate. Two approaches are proposed. One is a zero-risk incremental advance that employs a new growth condition to reduce the dislocation density. Another approach is a novel fabrication technique with high-risk but it could enable revolutionary rather than evolutionary advances. IV-VI semiconductors such as Pb1-xSnxSe can be grown epitaxially on Si substrate with a fluoride buffer layer. Monolithic mid-IR detector arrays have been fabricated on Si substrate with read-out integrated circuit and shown promising performance. The main advantages of IV-VI Pb-salt semiconductors include: (1) the large dielectric constant helps screen and localize the defect related effects. (2) The uniformity of the epitaxial material and thus the cutoff wavelength is high. This reduces the demand for powerful signal processing ROIC. (3) The low growth temperature allows direct growth of Pb-salt detector structure on Si with ROIC. Therefore, a cost-effective, monolithic FPA can be fabricated on Si substrate. Two-color simultaneous waveband operation and large formats of FPA can also be fabricated.

* information listed above is at the time of submission.

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