Innovative Nanoimprint Lithography Mask Technology for Sub-45 nm Features

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-06-C-0104
Agency Tracking Number: 04SB3-0244
Amount: $949,008.00
Phase: Phase II
Program: SBIR
Awards Year: 2006
Solicitation Year: 2004
Solicitation Topic Code: SB043-045
Solicitation Number: 2004.3
Small Business Information
1 Deer Park Drive, Suite O, Monmouth Junction, NJ, 08852
DUNS: 108972048
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Linshu Kong
 Manager
 (732) 355-1600
 lkong@nanonex.com
Business Contact
 Larry Koecher
Title: COO
Phone: (732) 355-1600
Email: lkoecher@nanonex.com
Research Institution
N/A
Abstract
The objective of the Phase-II proposal is to, based on the accomplishments of Phase-I, further explore and develop innovative nanoimprint lithography (NIL) mask technologies for sub-45 nm node, including mask structures, mask fabrication methods and mask coatings. In particular, we will further explore the solutions to the problems of line edge roughness, mask distortions, wear-out of anti-adhesion layers, non-uniform mask pattern depth, and high-resolution electron-beam lithography (EBL) and misalignment of patterns. These new technologies to be developed in Phase-II will significantly improve NIL mask technology, lower its cost, and advance NIL processes for sub-45 nm nodes.

* Information listed above is at the time of submission. *

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government