Innovative Nanoimprint Lithography Mask Technology for Sub-45 nm Features

Award Information
Agency: Department of Defense
Branch: Defense Advanced Research Projects Agency
Contract: W31P4Q-06-C-0104
Agency Tracking Number: 04SB3-0244
Amount: $949,008.00
Phase: Phase II
Program: SBIR
Awards Year: 2006
Solicitation Year: 2004
Solicitation Topic Code: SB043-045
Solicitation Number: 2004.3
Small Business Information
NANONEX CORP.
1 Deer Park Drive, Suite O, Monmouth Junction, NJ, 08852
DUNS: 108972048
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Linshu Kong
 Manager
 (732) 355-1600
 lkong@nanonex.com
Business Contact
 Larry Koecher
Title: COO
Phone: (732) 355-1600
Email: lkoecher@nanonex.com
Research Institution
N/A
Abstract
The objective of the Phase-II proposal is to, based on the accomplishments of Phase-I, further explore and develop innovative nanoimprint lithography (NIL) mask technologies for sub-45 nm node, including mask structures, mask fabrication methods and mask coatings. In particular, we will further explore the solutions to the problems of line edge roughness, mask distortions, wear-out of anti-adhesion layers, non-uniform mask pattern depth, and high-resolution electron-beam lithography (EBL) and misalignment of patterns. These new technologies to be developed in Phase-II will significantly improve NIL mask technology, lower its cost, and advance NIL processes for sub-45 nm nodes.

* information listed above is at the time of submission.

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