Innovative Nanoimprint Lithography Mask Technology for Sub-45 nm Features

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$749,923.00
Award Year:
2006
Program:
SBIR
Phase:
Phase II
Contract:
W31P4Q-06-C-0104
Award Id:
74279
Agency Tracking Number:
04SB3-0244
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1 Deer Park Drive, Suite O, Monmouth Junction, NJ, 08852
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
108972048
Principal Investigator:
Linshu Kong
Manager
(732) 355-1600
lkong@nanonex.com
Business Contact:
Larry Koecher
COO
(732) 355-1600
lkoecher@nanonex.com
Research Institution:
n/a
Abstract
The objective of the Phase-II proposal is to, based on the accomplishments of Phase-I, further explore and develop innovative nanoimprint lithography (NIL) mask technologies for sub-45 nm node, including mask structures, mask fabrication methods and mask coatings. In particular, we will further explore the solutions to the problems of line edge roughness, mask distortions, wear-out of anti-adhesion layers, non-uniform mask pattern depth, and high-resolution electron-beam lithography (EBL) and misalignment of patterns. These new technologies to be developed in Phase-II will significantly improve NIL mask technology, lower its cost, and advance NIL processes for sub-45 nm nodes.

* information listed above is at the time of submission.

Agency Micro-sites


SBA logo

Department of Agriculture logo

Department of Commerce logo

Department of Defense logo

Department of Education logo

Department of Energy logo

Department of Health and Human Services logo

Department of Homeland Security logo

Department of Transportation logo

Enviromental Protection Agency logo

National Aeronautics and Space Administration logo

National Science Foundation logo
US Flag An Official Website of the United States Government