Innovative Nanoimprint Lithography Mask Technology for Sub-45 nm Features
Department of Defense
Defense Advanced Research Projects Agency
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Small Business Information
1 Deer Park Drive, Suite O, Monmouth Junction, NJ, 08852
Socially and Economically Disadvantaged:
AbstractThe objective of the Phase-II proposal is to, based on the accomplishments of Phase-I, further explore and develop innovative nanoimprint lithography (NIL) mask technologies for sub-45 nm node, including mask structures, mask fabrication methods and mask coatings. In particular, we will further explore the solutions to the problems of line edge roughness, mask distortions, wear-out of anti-adhesion layers, non-uniform mask pattern depth, and high-resolution electron-beam lithography (EBL) and misalignment of patterns. These new technologies to be developed in Phase-II will significantly improve NIL mask technology, lower its cost, and advance NIL processes for sub-45 nm nodes.
* information listed above is at the time of submission.