Novel IR Detectors with Response up to 300 microns

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$69,996.00
Award Year:
2004
Program:
SBIR
Phase:
Phase I
Contract:
NNC04CA85C
Agency Tracking Number:
034297
Solicitation Year:
2003
Solicitation Topic Code:
S2.01
Solicitation Number:
n/a
Small Business Information
NDP OPTRONICS LLC
236 St Martins Drive, Mableton, GA, 30126-1965
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
118500516
Principal Investigator:
Steven Matsik
Principal Investigator
(404) 463-9622
smatsik@panther.gsu.edu
Business Contact:
A. G. Unil A. G. Unil Perera
President
(404) 651-2709
uperera@gsu.edu
Research Institution:
n/a
Abstract
The proposed innovation is the development of a novel Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detector responding up to a cutoff wavelength ~300 microns using the well developed GaAs/AlGaAs system. The detection is by free carrier absorption in doped emitter layers followed by internal photoemission of the carrier over the interfacial workfunction and collection of the photoemitted carriers. The workfunction, and hence cutoff, can be adjusted by varying the composition of the emitter and barrier layers. The key properties of the proposed detectors are broadband response and the ability to tailor cutoff and a NEP of 10^{-20} W Hz^{-1/2}. In Phase II, the HEIWIP detector will be combined with an LED to form an up-conversion device whose output can be read with a conventional NIR CCD. The HEIWIP-LED detector system would have the ability to cover the range from 40-300 microns or longer in an array format without the use of a multiplexer with spatial resolution determined by the NIR CCDs. Because the HEIWIP would not be divided into pixels, the HEIWIP-LED would not have the difraction problems affecting focal plane arrays responding to 300 microns.

* information listed above is at the time of submission.

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