New Sensing Capabilities: GaN Based Dualband UV-IR Detectors

Award Information
Agency:
Department of Defense
Amount:
$744,026.00
Program:
SBIR
Contract:
FA9453-06-C-0050
Solitcitation Year:
2005
Solicitation Number:
2005.1
Branch:
Air Force
Award Year:
2006
Phase:
Phase II
Agency Tracking Number:
F051-029-0879
Solicitation Topic Code:
AF05-029
Small Business Information
NDP OPTRONICS LLC
236 Saint Martins Dr SE, Mableton, GA, 30126
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
Y
Duns:
118500516
Principal Investigator
 Steven Matsik
 Principal Investigator
 (404) 463-9623
 smatsik@aol.com
Business Contact
 A. Unil Perera
Title: President
Phone: (404) 651-2709
Email: uperera@gsu.edu
Research Institution
N/A
Abstract
The proposed innovation is the development of a novel dual band detector responding in both the UV and IR regions, based on a GaN/AlGaN heterostructure. The IR response is based on HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors, which was demonstrated using AlGaAs/GaAs and GaN/AlGaN structures. By also using interband transitions, response in the UV range at room temperature was incorporated into the device during Phase I. A device with responses in the UV shorter than 350 nm and in the 5-13 micron range (at 80K) was demonstrated. By varying the material composition the spectral ranges can be tailored for the specific application. The detector would allow simultaneous imaging of both spectral ranges using a single detector array. This would provide a large advantage over current approaches which use separate detectors to image the two regions. By varying the Al fraction in the AlGaN, the detector can be easily extended to cover the range up to 40 microns. During Phase II, work will concentrate on optimization for specific applications and development of methods for distinguishing the IR and UV responses in a single pixel. Incorporating InGaN once could even extend the coverage in to the visible region to have a detector covering UV- Vis-IR.

* information listed above is at the time of submission.

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