Cathode-Supported Thin-Film Solid Oxide Cells with Low Operating Temperatures

Award Information
Agency:
Department of Energy
Branch
n/a
Amount:
$100,000.00
Award Year:
1999
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
44332
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Nextech Materials, Ltd.
720-I Lakeview Plaza Boulevard, Worthingtonn, OH, 43085
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
() -
Business Contact:
() -
Research Institution:
n/a
Abstract
Not Available Optical storage systems and memories are emerging rapidly as a solution to address the next generation requirement of high data-density and fast access time, and have created demand for high-speed and large-volume data handling interconnects between optical memory devices and processors. Electrical interconnects fail to keep up with this new demand due to their basic limitations. Optical interconnects and devices inherently offer large bandwidth and hence high-speed operation. Radiant Research, Inc., proposes to construct a multi-wavelength-based interconnect for interfacing optical memories and processors using guided-wave technology in conjunction with VCSELs, Photodiodes, wavelength division (de)multiplexing (W(D)DM) devices and multimode fibers. Employment of the WDDM device significantly increases the aggregate bandwidth to well above 10 Gb/sec while minimizing the latency of data transfer. Furthermore, the employment of an innovative three-dimensionally-tapered waveguide will significantly reduce the system insertion loss and thus achieve high fidelity of data transmission. Experimental result shows that each WDDM wavelength channel can provide 2,500 Gb/sec. Consequently, the projected target of throughput enhancement will be achieved. Important benefits of this approach are significantly improved device performance in the context of data transfer for 3D-optical memory, relaxed fabrication tolerance and reduced cost.

* information listed above is at the time of submission.

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