NITEK, INC.

Company Information
Address 1804 Salem Church Road
Irmo, SC, -


Information

DUNS: 167443170

# of Employees: 5


Ownership Information

Hubzone Owned: N

Socially and Economically Disadvantaged: N

Woman Owned: N



Award Charts




Award Listing

  1. SBIR Phase I: High power, high efficiency micropixel ultraviolet light emitting lamp

    Amount: $149,989.00

    This Small Business Innovation Research (SBIR) Phase I project will result in developing novel high-power, high-efficiency Deep Ultraviolet Light Emitting Diode (DUV LED) Lamps based on an innovative ...

    SBIRPhase I2011National Science Foundation
  2. AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters

    Amount: $999,973.00

    The goal of the Phase II program is to fabricate high voltage high power converter/inverters for high frequency/high temperature operation using enhancement mode-depletion mode insulating ate AlInN-Ga ...

    SBIRPhase II2011Department of Defense Missile Defense Agency
  3. Large Area, High Power, Vertically Conducting Deep UV LEDs

    Amount: $729,984.00

    This SBIR Phase II project will result in Nitek Inc. commercializing high power, large area, UVC-LED Lamps based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based d ...

    SBIRPhase II2010Army Department of Defense
  4. SBIR Phase II: High Power, Vertically Conducting UV LEDs

    Amount: $499,305.00

    This Small Business Innovation Research (SBIR) Phase II project will result in the commercialization of high power, large area, deep UV LEDs based on a novel vertically conducting geometry that is arb ...

    SBIRPhase II2009National Science Foundation
  5. SBIR Phase II: Bulk AlN Growth For III-Nitride Devices

    Amount: $493,733.00

    This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). This Small Business Innovation Research Phase II project will result in the development of a novel se ...

    SBIRPhase II2009National Science Foundation
  6. AlInN Lattice Matched Barrier HEMTs on Low Defect Bulk and Quasi-Bulk III-Nitride Substrates

    Amount: $99,960.00

    The goal of the Phase I program is to demonstrate the feasibility of our technical approach to grow AlInN lattice Matched Barrier HEMTs on low defect Bulk and quasi-bulk III-Nitride Substrates (GaN). ...

    STTRPhase I2009Air Force Department of Defense
  7. AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters

    Amount: $99,810.00

    The goal of the Phase I program is to demonstrate the feasibility of a high-voltage, high-temperature insulating gate AlInN-GaN/i-SiC enhancement-mode HEMT to serve as the basic building block of a po ...

    SBIRPhase I2009Missile Defense Agency Department of Defense
  8. Large Area, High Power, Vertically Conducting Deep UV LEDs

    Amount: $119,925.00

    Nitek Inc. proposes to develop deep ultraviolet light emitting diodes having high quantum efficiency, long device lifetime, and large emission area to make usable for force protection objectives of bi ...

    SBIRPhase I2008Army Department of Defense
  9. SBIR PHASE I: Bulk AlN Growth For III-Nitride Devices

    Amount: $99,870.00

    This Small Business Innovation Research project is to develop a novel semiconductor growth technique resulting in low dislocation density AlInGaN material that can be used to advance the current state ...

    SBIRPhase I2008National Science Foundation
  10. SBIR PHSE I: High Power, Vertically Conducting UV LEDs

    Amount: $99,905.00

    This SBIR Phase I research program will develop high power, large area, deep ultraviolet LEDs based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep ultraviol ...

    SBIRPhase I2008National Science Foundation

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