NITEK, INC.

Basic Information

1804 Salem Church Road
Irmo, SC, -

Company Profile

n/a

Additional Details

Field Value
DUNS: 167443170
Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N
Number of Employees: 5


  1. SBIR Phase I: High power, high efficiency micropixel ultraviolet light emitting lamp

    Amount: $149,989.00

    This Small Business Innovation Research (SBIR) Phase I project will result in developing novel high-power, high-efficiency Deep Ultraviolet Light Emitting Diode (DUV LED) Lamps based on an innovative ...

    SBIR Phase I 2011 National Science Foundation
  2. AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters

    Amount: $999,973.00

    The goal of the Phase II program is to fabricate high voltage high power converter/inverters for high frequency/high temperature operation using enhancement mode-depletion mode insulating ate AlInN-Ga ...

    SBIR Phase II 2011 Department of Defense Missile Defense Agency
  3. Large Area, High Power, Vertically Conducting Deep UV LEDs

    Amount: $729,984.00

    This SBIR Phase II project will result in Nitek Inc. commercializing high power, large area, UVC-LED Lamps based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based d ...

    SBIR Phase II 2010 Army Department of Defense
  4. SBIR Phase II: High Power, Vertically Conducting UV LEDs

    Amount: $499,305.00

    This Small Business Innovation Research (SBIR) Phase II project will result in the commercialization of high power, large area, deep UV LEDs based on a novel vertically conducting geometry that is arb ...

    SBIR Phase II 2009 National Science Foundation
  5. SBIR Phase II: Bulk AlN Growth For III-Nitride Devices

    Amount: $493,733.00

    This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). This Small Business Innovation Research Phase II project will result in the development of a novel se ...

    SBIR Phase II 2009 National Science Foundation
  6. AlInN Lattice Matched Barrier HEMTs on Low Defect Bulk and Quasi-Bulk III-Nitride Substrates

    Amount: $99,960.00

    The goal of the Phase I program is to demonstrate the feasibility of our technical approach to grow AlInN lattice Matched Barrier HEMTs on low defect Bulk and quasi-bulk III-Nitride Substrates (GaN). ...

    STTR Phase I 2009 Air Force Department of Defense
  7. AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters

    Amount: $99,810.00

    The goal of the Phase I program is to demonstrate the feasibility of a high-voltage, high-temperature insulating gate AlInN-GaN/i-SiC enhancement-mode HEMT to serve as the basic building block of a po ...

    SBIR Phase I 2009 Missile Defense Agency Department of Defense
  8. Large Area, High Power, Vertically Conducting Deep UV LEDs

    Amount: $119,925.00

    Nitek Inc. proposes to develop deep ultraviolet light emitting diodes having high quantum efficiency, long device lifetime, and large emission area to make usable for force protection objectives of bi ...

    SBIR Phase I 2008 Army Department of Defense
  9. SBIR PHASE I: Bulk AlN Growth For III-Nitride Devices

    Amount: $99,870.00

    This Small Business Innovation Research project is to develop a novel semiconductor growth technique resulting in low dislocation density AlInGaN material that can be used to advance the current state ...

    SBIR Phase I 2008 National Science Foundation
  10. SBIR PHSE I: High Power, Vertically Conducting UV LEDs

    Amount: $99,905.00

    This SBIR Phase I research program will develop high power, large area, deep ultraviolet LEDs based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep ultraviol ...

    SBIR Phase I 2008 National Science Foundation

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