SBIR PHASE I: Bulk AlN Growth For III-Nitride Devices

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$99,870.00
Award Year:
2008
Program:
SBIR
Phase:
Phase I
Contract:
0740546
Award Id:
88293
Agency Tracking Number:
0740546
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
1804 Salem Church Rd, Irmo, SC, 29063
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
167443170
Principal Investigator:
VinodAdivarahan
PhD
(803) 777-0710
adivarah@engr.sc.edu
Business Contact:
VinodAdivarahan
PhD
(803) 777-0710
adivarah@engr.sc.edu
Research Institute:
n/a
Abstract
This Small Business Innovation Research project is to develop a novel semiconductor growth technique resulting in low dislocation density AlInGaN material that can be used to advance the current state of III-Nitride semiconductor device performance. The growth technique termed Metalorganic Hydride Vapor Phase Epitaxy (MOHVPE) is a hybrid of Metalorganic Chemical Vapor Deposition (MOCVD), used for device growth where atomic layer accuracy is required, and Hydride Vapor Phase Epitaxy (HVPE), used for fast bulk growth. Deep UV light emitting diodes represent a new market opportunity for commercialization of semiconductor products for component and systems use. U.S. based manufacturers have succeeded in competing globally in the visible LED market with two of the five largest LED manufacturers being based in the U.S. with two in Japan and one in Germany. The Deep UV light emitting diodes enabled by this project will find application in water sterilization point of use systems.

* information listed above is at the time of submission.

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