SBIR PHASE I: Bulk AlN Growth For III-Nitride Devices

Award Information
Agency:
National Science Foundation
Amount:
$99,870.00
Program:
SBIR
Contract:
0740546
Solitcitation Year:
N/A
Solicitation Number:
NSF 00-144
Branch:
N/A
Award Year:
2008
Phase:
Phase I
Agency Tracking Number:
0740546
Solicitation Topic Code:
EL
Small Business Information
Nitek Incorporated
1804 Salem Church Rd, Irmo, SC, 29063
Hubzone Owned:
N
Woman Owned:
Y
Socially and Economically Disadvantaged:
N
Duns:
167443170
Principal Investigator
 Vinod Adivarahan
 PhD
 (803) 777-0710
 adivarah@engr.sc.edu
Business Contact
 Vinod Adivarahan
Title: PhD
Phone: (803) 777-0710
Email: adivarah@engr.sc.edu
Research Institution
N/A
Abstract
This Small Business Innovation Research project is to develop a novel semiconductor growth technique resulting in low dislocation density AlInGaN material that can be used to advance the current state of III-Nitride semiconductor device performance. The growth technique termed Metalorganic Hydride Vapor Phase Epitaxy (MOHVPE) is a hybrid of Metalorganic Chemical Vapor Deposition (MOCVD), used for device growth where atomic layer accuracy is required, and Hydride Vapor Phase Epitaxy (HVPE), used for fast bulk growth. Deep UV light emitting diodes represent a new market opportunity for commercialization of semiconductor products for component and systems use. U.S. based manufacturers have succeeded in competing globally in the visible LED market with two of the five largest LED manufacturers being based in the U.S. with two in Japan and one in Germany. The Deep UV light emitting diodes enabled by this project will find application in water sterilization point of use systems.

* information listed above is at the time of submission.

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