AlInN-GaN High Voltage Enhancement Mode HEMT for Power Converters-Inverters

Award Information
Agency:
Department of Defense
Branch:
Missile Defense Agency
Amount:
$99,810.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
HQ0147-09-C-7144
Agency Tracking Number:
B083-029-0377
Solicitation Year:
2008
Solicitation Topic Code:
MDA08-029
Solicitation Number:
2008.3
Small Business Information
Nitek Inc
1804 Salem Church Road, Irmo, SC, 29063
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
Y
Duns:
167443170
Principal Investigator
 Vinod Adivarahan
 Manager
 (877) 230-5338
 vinod@nitekusa.com
Business Contact
 Rubina Asif Khan
Title: Chief Operating Officer
Phone: (803) 530-2338
Email: ruby@nitekusa.com
Research Institution
N/A
Abstract
The goal of the Phase I program is to demonstrate the feasibility of a high-voltage, high-temperature insulating gate AlInN-GaN/i-SiC enhancement-mode HEMT to serve as the basic building block of a power converter/inverter. Our technical approach is to use lattice matched AlInN-GaN epilayers in conjunction with a field-plated insulating gate HEMT device design and a fluorine treatment to accomplish the goal. We believe that the combination of lattice matched AlInN field-plated HEMTs, a unique pulsed PECVD insulator deposition and the use of a controlled fluorine treatment should overcome the issues currently faced by the AlGaN-GaN based technology. Large gate devices will be fabricated in the Phase I to establish the feasibility of our device design. Nitek currently has the baseline materials technology which is sufficient for our Phase I program needs. It will also to be improved under a separate Air-Force supported Phase I SBIR program. The suitability of our devices for military and commercial applications will be established via a joint processing and device testing program with DOD test labs (WPAFB and the Joint Services Task Team). In the Phase II program we will expand the gate peripheries, develop the packaging for thermal management and demonstrate circuits using the AlInN-GaN HEMT building block. In the Phase III program we will develop a large volume manufacturing technology for epitaxial wafers and devices for supply to DOD and commercial outfits in a strategic partnership with a large company.

* information listed above is at the time of submission.

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