Nitronex Corporation

Address

2305 Presidential Drive
Durham, NC, -

http://www.nitronex.com

Information

DUNS: 91129465
# of Employees: 54

Ownership Information

Hubzone Owned: N
Socially and Economically Disadvantaged: N
Woman Owned: N

Award Charts




Award Listing

  1. X-Band GaN Power Amplifiers for Long Range Space RF Telecommunications

    Amount: $124,918.00

    The future capabilities of sensors and instrumentation deployed in space will continue to increase, resulting in increasing amounts of collected data. To reach these higher speed data rates, increase ...

    SBIRPhase I2012National Aeronautics and Space Administration
  2. X-Band and Ka Band Low Noise Block Downconverter

    Amount: $99,911.00

    Nitronex Corporation has identified unique innovations in Gallium Nitride (GaN) high electron mobility transistors (HEMT) for realizing advancements in X and Ka-Band low noise amplifiers (LNAs). Thes ...

    SBIRPhase I2011Department of Defense
  3. Novel HEMT based on GaN on Diamond for High Power Amplifiers

    Amount: $985,680.00

    The performance and reliability of AlGaN/GaN HEMT transistor technology is closely coupled to the ability to reduce the thermal resistance of the device and to maintain a reasonable junction temperatu ...

    SBIRPhase II2009Missile Defense Agency Department of Defense
  4. GaN on Diamond HEMT for Gate Thermal Management

    Amount: $100,000.00

    GaN based HEMTs are capable of achieving high power density at high frequency. Thus, solid-state high power amplifiers based on GaN will be smaller and lighter than incumbent technologies. The use o ...

    SBIRPhase I2008Navy Department of Defense
  5. High-Efficiency GaN HEMT SSPAs for S-band Radar

    Amount: $70,000.00

    S and X-band radars are central to the Air and Missile defense capability of the US ballistic missile defense (BMD) systems. The objective of this Phase I program is to investigate various PA classes ...

    SBIRPhase I2008Navy Department of Defense
  6. Novel HEMT based on GaN on Diamond for High Power Amplifiers

    Amount: $99,784.00

    GaN based HEMTs are capable of achieving high power density at high frequency. Thus, solid-state high power amplifiers based on GaN will be smaller and lighter than incumbent technology. The use of a ...

    SBIRPhase I2008Missile Defense Agency Department of Defense
  7. AlGaN/GaN HFETs on Silicon for BMDS X-Band Radars

    Amount: $868,975.00

    AlGaN/GaN FETs on Si will be developed and optimized for operation at high frequency (X-band and above). The high frequency performance will be improved by modifications to the existing commercialize ...

    STTRPhase II2008Missile Defense Agency Department of Defense
  8. GaN FETs for Class D PAs and broadband MMICs

    Amount: $750,000.00

    The objective of the Phase II SBIR is to develop our GaN FET technology and satisfy the needs of NAVAIR communications systems. Specifically, we will be developing GaN FET technology that is suitable ...

    SBIRPhase II2008Navy Department of Defense
  9. GaN HEMTs for 1kW L-band E2C HPA

    Amount: $750,000.00

    GaN HEMTs have the ability to delivery very high power levels when operated at at high voltages (48V). Therefore, they are ideally suited for high power amplifiers such as the E2C HPA used in the Adva ...

    SBIRPhase II2008Navy Department of Defense
  10. GaN HEMTs for Broadband RF Power Amplifier Technology

    Amount: $88,103.00

    GaN FETs are capable of very high power levels relative to Si or GaAs technologies. This high power density leads to very broadband capability as needed for the 2MHz-2GHz JTRS radio program. Nitronex ...

    SBIRPhase I2007Navy Department of Defense

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