Nitronex Corporation

Company Information

Company Name
Nitronex Corporation
2305 Presidential Drive
Durham, NC, -
1 919-424-5224
Number of Employees

Award Totals

SBIR Phase I
STTR Phase I
Chart code to be here

Award List

  1. N/A

    Amount: $70,000.00


    STTR Phase I 2000 NavyDepartment of Defense
  2. N/A

    Amount: $64,989.00


    SBIR Phase I 2000 Missile Defense AgencyDepartment of Defense
  3. Development of III-V Nitride Diode Arrays for UV Imaging Applications

    Amount: $65,000.00


    STTR Phase I 1999 Missile Defense AgencyDepartment of Defense
  4. High IP3 AlGaN/GaN HEMT LNAs on Silicon

    Amount: $400,000.00

    The phase II proposed effort continues our studies initiated under our phase I work entitled Nitride Semiconductor Substrates. Having demonstrated the ability to produce large area (100-mm) GaN-on-si ...

    STTR Phase II 2001 NavyDepartment of Defense
  5. Gallium Nitride on Silicon Materials Assessment for GaN-Based Low Noise Amplifiers using Pendeoepitaxial Growth Techniques

    Amount: $65,000.00

    Nitronex will develop GaN on silicon substrates for GaN-based LNAs utilizing pendeoepitaxial growth techniques. The properties of these revolutionary low-defect-density GaN on Silicon wafers makes h ...

    SBIR Phase I 2001 Missile Defense AgencyDepartment of Defense
  6. AlGaN/GaN HFETs on Silicon for BMDS X-Band Radars

    Amount: $99,971.00

    In this program, we will combine commercially available AlGaN/GaN on Si FETs with short gates such that the high frequency performance (X-band and higher) can be significantly increased. The AlGaN/Ga ...

    STTR Phase I 2006 Missile Defense AgencyDepartment of Defense
  7. L-Band Solid-State High Power Amplifier for Airborne Platforms

    Amount: $79,600.00

    Utilizing Nitronex's solid state GaN FETs and SAIC's design expertise in PAs, a small, lightweight power amplifier can be achieved. Specifically, in this phase I effort, Nitronex will advance GaN tec ...

    SBIR Phase I 2006 NavyDepartment of Defense
  8. Broadband GaN-based Power Amplifier for Airborne Tactical Communication Systems

    Amount: $79,421.00

    Nitronex will use baseline GaN HEMT process (NRF1) to demonstrate feasibility of broadband 35-40W solid-state PA with >35% efficiency across 225-3200MHz frequency range required by the program. Nitro ...

    SBIR Phase I 2006 NavyDepartment of Defense
  9. High Linearity-High Efficiency Power Amplifiers Based on Digital Signal Processing Techniques and Wide Bandgap Devices

    Amount: $69,879.00

    Nitronex Corporation proposes to demonstrate the feasibility of building a DPD system implementing adaptive gate bias control and signal insensitive correction for enhancing the power added efficiency ...

    STTR Phase I 2006 NavyDepartment of Defense
  10. GaN HEMTs for Broadband RF Power Amplifier Technology

    Amount: $62,061.00

    GaN FETs are capable of very high power levels relative to Si or GaAs technologies. This high power density leads to very broadband capability as needed for the 2MHz-2GHz JTRS radio program. Nitronex ...

    SBIR Phase I 2007 NavyDepartment of Defense

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