High IP3 AlGaN/GaN HEMT LNAs on Silicon

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$400,000.00
Award Year:
2001
Program:
STTR
Phase:
Phase II
Contract:
N00014-01-C-0253
Agency Tracking Number:
525030172
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
NITRONEX CORP.
628Hutton Street - Suite 103, Raleigh, NC, 27606
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
091129465
Principal Investigator:
Kevin Linthicum
(919) 807-9100
Business Contact:
Warren Weeks
(919) 807-9100
Research Institution:
UNIV. OF MICHIGAN
Dimitris Pavlidis
2307 EECS
Ann Arbor, MI, 48109
(734) 647-1778
Nonprofit college or university
Abstract
The phase II proposed effort continues our studies initiated under our phase I work entitled Nitride Semiconductor Substrates. Having demonstrated the ability to produce large area (100-mm) GaN-on-silicon, Nitronex now proposes to advance the technologytowards fabrication and commercialization of X-band High IP3 AlGaN/GaN HEMT Low Noise Amplifiers (LNAs) on silicon. Our goals are to demonstrate LNAs exhibiting NF=0.9dB at 10GHz. The device will be scaled to achieve LNAs with third-order intercept pointof 50dBm. We also propose to carry on the LNA work towards Hybrids and MMICs. Nitronex will partner with the University of Michigan, under the direction of Dr. Dimitris Pavlidis, to accomplish these goals.BENEFITS: Commercial applications for GaNsolid-state amplifiers include cellular base station transmitters, cellular high frequency backhaul links, satellite communications, point-to-point and point-to-multipoint distribution systems, including the emerging MMDS and LMDS standards.

* information listed above is at the time of submission.

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