AlGaN/GaN HFETs on Silicon for BMDS X-Band Radars

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: HQ0006-06-C-7519
Agency Tracking Number: B064-012-0172
Amount: $99,971.00
Phase: Phase I
Program: STTR
Awards Year: 2006
Solicitation Year: 2006
Solicitation Topic Code: MDA06-T012
Solicitation Number: N/A
Small Business Information
NITRONEX CORPORATION
628 Hutton Street - Suite 106, Raleigh, NC, 27606
DUNS: 091129465
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Edwin Piner
 Director of Materials Engineering
 (919) 424-5167
 epiner@nitronex.com
Business Contact
 Edwin Piner
Title: Director of Materials Engineering
Phone: (919) 424-5167
Email: epiner@nitronex.com
Research Institution
 UNIV. OF FLORIDA
 Stephen J Pearton
 343 Nuclear Science P.O. Box 1
Gainesville, FL, 32611
 (352) 846-1086
 Nonprofit college or university
Abstract
In this program, we will combine commercially available AlGaN/GaN on Si FETs with short gates such that the high frequency performance (X-band and higher) can be significantly increased. The AlGaN/GaN material system has significant advantages over the incumbent technology for X-band applications; specifically, AlGaN/GaN FETs have much higher power density which translates into broader bandwidth. This bandwidth may be traded to increase PAE in the power amplifier design. Affordable and reliable AlGaN/GaN FETs that operate in L and S bands have been commercialized by Nitronex. This has been made possible largely through the use of high quality and scalable Si substrates. Nitronex is highly experienced in GaN epitaxy, fabrication, device and RF design. By working with the University of Florida and their short gate lithography capability combined with Georgia Institute of Technology and their physical simulation expertise, we will demonstrate high performance X-band discrete devices. In Phase II, we will work with systems level military contractors to develop the insertion strategy for X-band capable AlGaN/GaN FETs on Si. Based on such a strategy, the conceived solution will be implemented through the development of a MMIC solution that meets all program requirements.

* information listed above is at the time of submission.

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