GaN HEMTs for Broadband RF Power Amplifier Technology

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00039-08-C-0073
Agency Tracking Number: N072-155-0553
Amount: $88,103.00
Phase: Phase I
Program: SBIR
Awards Year: 2007
Solicitation Year: 2007
Solicitation Topic Code: N07-155
Solicitation Number: 2007.2
Small Business Information
2305 Presidential Drive, Durham, NC, 27703
DUNS: 091129465
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Chris Park
 Senior Device Engineer
 (919) 424-4204
 cpark@nitronex.com
Business Contact
 Pradeep Rajagopal
Title: Program Manager
Phone: (919) 424-5176
Email: pradeep@nitronex.com
Research Institution
N/A
Abstract
GaN FETs are capable of very high power levels relative to Si or GaAs technologies. This high power density leads to very broadband capability as needed for the 2MHz-2GHz JTRS radio program. Nitronex has commercialized AlGaN/GaN HEMTs on silicon substrates. As such, reliable devices and accurate device models are available for sub-4GHz operation in class AB. During this Phase I, we will demonstrate the feasiblity of a PA based on our GaN FET technology that meets all the JTRS requiements. We will investigate PA designs for this applciation using our current generation discrete devices, our next generation high frequency capable GaN FET devices (that can be used in Class D topology) and our GaN MMICs for this applications.

* Information listed above is at the time of submission. *

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