High-Efficiency GaN HEMT SSPAs for S-band Radar

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$70,000.00
Award Year:
2008
Program:
SBIR
Phase:
Phase I
Contract:
N65538-08-M-0140
Award Id:
87813
Agency Tracking Number:
N082-172-0957
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2305 Presidential Drive, Durham, NC, 27703
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
091129465
Principal Investigator:
Thomas Winslow
Principal MMIC Engineer
(919) 424-5189
twinslow@nitronex.com
Business Contact:
Edwin Piner
Director, Advanced Technology
(919) 424-5167
epiner@nitronex.com
Research Institution:
n/a
Abstract
S and X-band radars are central to the Air and Missile defense capability of the US ballistic missile defense (BMD) systems. The objective of this Phase I program is to investigate various PA classes of operation and identify approaches with significantly improved efficiency. The strategy proposed in this SBIR Phase I proposal is to combine the benefits of high efficiency switching architectures with the power and bandwidth capability offered by GaN HEMTs. High efficiencies are possible through use of PA classes such as D, E or F that operate the transistor as a switch. Such approaches offer significant promise for high efficiency RF transmitters provided fundamental efforts are expended to overcome the technical challenges in the input and output matching designs posed in such approaches.

* information listed above is at the time of submission.

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