Novel HEMT based on GaN on Diamond for High Power Amplifiers

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,784.00
Award Year:
2008
Program:
SBIR
Phase:
Phase I
Contract:
W9113M-08-C-0097
Award Id:
86458
Agency Tracking Number:
B073-034-0445
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2305 Presidential Drive, Durham, NC, 27703
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
091129465
Principal Investigator:
Edwin Piner
Director of Advanced Technology
(919) 424-5167
epiner@nitronex.com
Business Contact:
Edwin Piner
Director, Advanced Technology
(919) 424-5167
epiner@nitronex.com
Research Institution:
n/a
Abstract
GaN based HEMTs are capable of achieving high power density at high frequency. Thus, solid-state high power amplifiers based on GaN will be smaller and lighter than incumbent technology. The use of a silicon substrate for GaN HEMTs provides a reliable GaN device which is also economical. MMICs based GaN on Si are ideally suited for applications in X-band radar systems that are part of the ballistic missile defense system developed by the MDA. The performance and reliability of GaN HEMTs is closely linked to the operating temperature. In this proposal, we will develop a novel GaN on diamond based HEMT structure with superior thermal conductivity relative to conventional approaches. In addition to significantly improving the thermal resistance, we will develop a novel process pathway that is inherently manufacturable and cost effective thus enabling the maximum usage of GaN technology for various military applications. In Phase I, we will demonstrate the feasibility of the material structure by performing iterative process development. In Phase II, we will focus on improving the maturity of the concept by further optimizing the process and by developing a functioning GaN on diamond HEMT device for evaluation of thermal and electrical performance.

* information listed above is at the time of submission.

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