GaN FETs for Class D PAs and broadband MMICs

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$750,000.00
Award Year:
2008
Program:
SBIR
Phase:
Phase II
Contract:
N68335-08-C-0002
Agency Tracking Number:
N062-119-1019
Solicitation Year:
2006
Solicitation Topic Code:
N06-119
Solicitation Number:
2006.2
Small Business Information
NITRONEX CORP.
2305 Presidential Drive, Durham, NC, 27703
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
091129465
Principal Investigator:
Pradeep Rajagopal
Program Manager
(919) 424-5176
pradeep@nitronex.com
Business Contact:
Edwin Piner
Director, Advanced Techno
(919) 424-5167
epiner@nitronex.com
Research Institution:
n/a
Abstract
The objective of the Phase II SBIR is to develop our GaN FET technology and satisfy the needs of NAVAIR communications systems. Specifically, we will be developing GaN FET technology that is suitable for Class D operation at frequencies up to 2GHz. We will achieve the program objectives by developing high frequency capable GaN FETs to support the switching speeds needed for the Class D PA. We will also develop broadband high power GaN MMICs with power and efficiency across 225-3200MHz frequency bands. This phase II will benefit JTRS 2MHz-2GHz radio program and also the F/A-18 Hornet avionics needs.

* information listed above is at the time of submission.

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