GaN HEMTs for 1kW L-band E2C HPA

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N68335-08-C-0001
Agency Tracking Number: N062-125-0960
Amount: $750,000.00
Phase: Phase II
Program: SBIR
Awards Year: 2008
Solicitation Year: 2006
Solicitation Topic Code: N06-125
Solicitation Number: 2006.2
Small Business Information
2305 Presidential Drive, Durham, NC, 27703
DUNS: 091129465
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Pradeep Rajagopal
 Program Manager
 (919) 424-5176
Business Contact
 Edwin Piner
Title: Director of Advanced Tech
Phone: (919) 424-5167
Research Institution
GaN HEMTs have the ability to delivery very high power levels when operated at at high voltages (48V). Therefore, they are ideally suited for high power amplifiers such as the E2C HPA used in the Advanced Hawkeye aircraft. The current version of the E2C HPA utilizes silicon technology. We propose to develop a reliable 300W GaN packaged device that can be used to develop a significantly lighter and smaller HPA. Specifically, we will be replacing 21 silicon devices with only 5 GaN devices, which is estimated to reduce weight by a factor of 2 with a new system design. Further, we will develop such a device on the reliable GaN FET on Si platform technology that is fully qualified for military and commercial applications. The MTTF of our GaN FET technology is >10 million hours at a Tj of 150 degress celsius.

* information listed above is at the time of submission.

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