GaN HEMTs for 1kW L-band E2C HPA

Award Information
Agency:
Department of Defense
Branch
Navy
Amount:
$750,000.00
Award Year:
2008
Program:
SBIR
Phase:
Phase II
Contract:
N68335-08-C-0001
Award Id:
76985
Agency Tracking Number:
N062-125-0960
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2305 Presidential Drive, Durham, NC, 27703
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
091129465
Principal Investigator:
Pradeep Rajagopal
Program Manager
(919) 424-5176
pradeep@nitronex.com
Business Contact:
Edwin Piner
Director of Advanced Tech
(919) 424-5167
epiner@nitronex.com
Research Institution:
n/a
Abstract
GaN HEMTs have the ability to delivery very high power levels when operated at at high voltages (48V). Therefore, they are ideally suited for high power amplifiers such as the E2C HPA used in the Advanced Hawkeye aircraft. The current version of the E2C HPA utilizes silicon technology. We propose to develop a reliable 300W GaN packaged device that can be used to develop a significantly lighter and smaller HPA. Specifically, we will be replacing 21 silicon devices with only 5 GaN devices, which is estimated to reduce weight by a factor of 2 with a new system design. Further, we will develop such a device on the reliable GaN FET on Si platform technology that is fully qualified for military and commercial applications. The MTTF of our GaN FET technology is >10 million hours at a Tj of 150 degress celsius.

* information listed above is at the time of submission.

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