Novel HEMT based on GaN on Diamond for High Power Amplifiers

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$985,680.00
Award Year:
2009
Program:
SBIR
Phase:
Phase II
Contract:
W9113M-09-C-0207
Award Id:
86458
Agency Tracking Number:
B073-034-0445
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2305 Presidential Drive, Durham, NC, 27703
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
091129465
Principal Investigator:
EdwinPiner
Director, Advanced Techno
(919) 424-5167
epiner@nitronex.com
Business Contact:
MichaelMacon
Manager, Contracts
(919) 424-5224
mmacon@nitronex.com
Research Institute:
n/a
Abstract
The performance and reliability of AlGaN/GaN HEMT transistor technology is closely coupled to the ability to reduce the thermal resistance of the device and to maintain a reasonable junction temperature. Current commercial products offered by Nitronex pro

* information listed above is at the time of submission.

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