Single-Frequency Semiconductor Lasers Operating at 1.5 and 2.0 microns

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$99,789.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
NNX09CF23P
Award Id:
90818
Agency Tracking Number:
084392
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
5408 NE 88th Street, Building E, Vancouver, WA, 98665
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
799811646
Principal Investigator:
PaulLeisher
Principal Investigator
(360) 566-4460
paul.leisher@nlight.net
Business Contact:
PaulLeisher
Device Engineer
(360) 566-4460
paul.leisher@nlight.net
Research Institute:
n/a
Abstract
While conventional injection seeding sources (such as DFB diode lasers and rare-earth doped solid-state microchip lasers) are available at 1.5 microns, these sources typically lack the ultra-narrow (<50 kHz), ultra-stable output spectrum required for use in applications such as Doppler shift measurements of the tropospheric winds. Furthermore, similar sources which operate at 2.0 microns (a preferred wavelength for space-based atmospheric measurements) are simply unavailable. To fill this need, nLight proposes the parallel development of 1.5 and 2.0 micron injection seeding sources based on our well-established, wavelength-scalable, industry-leading InP semiconductor laser design.

* information listed above is at the time of submission.

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