Single-Frequency Semiconductor Lasers Operating at 1.5 and 2.0 microns

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: NNX09CF23P
Agency Tracking Number: 084392
Amount: $99,789.00
Phase: Phase I
Program: SBIR
Awards Year: 2009
Solicitation Year: 2008
Solicitation Topic Code: S1.01
Solicitation Number: N/A
Small Business Information
5408 NE 88th Street, Building E, Vancouver, WA, 98665-0990
DUNS: 799811646
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Paul Leisher
 Principal Investigator
 (360) 566-4460
 paul.leisher@nlight.net
Business Contact
 Paul Leisher
Title: Device Engineer
Phone: (360) 566-4460
Email: paul.leisher@nlight.net
Research Institution
N/A
Abstract
While conventional injection seeding sources (such as DFB diode lasers and rare-earth doped solid-state microchip lasers) are available at 1.5 microns, these sources typically lack the ultra-narrow (<50 kHz), ultra-stable output spectrum required for use in applications such as Doppler shift measurements of the tropospheric winds. Furthermore, similar sources which operate at 2.0 microns (a preferred wavelength for space-based atmospheric measurements) are simply unavailable. To fill this need, nLight proposes the parallel development of 1.5 and 2.0 micron injection seeding sources based on our well-established, wavelength-scalable, industry-leading InP semiconductor laser design.

* Information listed above is at the time of submission. *

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