NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.

Company Information

Company Name
NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.
Address
11409 Valley View Road
Eden Prairie, MN, -
Phone
1 952-996-1610
URL
n/a
DUNS
114264351
Number of Employees
45
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N

Award Totals

PROGRAM/PHASE
AWARD AMOUNT ($)
NUMBER OF AWARDS
SBIR Phase I
$7,005,272.00
94
SBIR Phase II
$29,467,616.00
50
STTR Phase I
$434,974.00
5
STTR Phase II
$1,017,379.00
2
Chart code to be here

Award List

  1. Field Programmable Gate Array (FPGA) Physical Unclonable Functions

    Amount: $99,985.00

    Randomness is required for a variety of computational, statistical, testing, and security related applications. Of particular interest are future commercial high-speed encryption applications, such a ...

    SBIR Phase I 2010 Office of the Secretary of DefenseDepartment of Defense
  2. SBIR Phase I:Three-axis Vector Magnetometer with Novel Z-axis Sensor

    Amount: $149,808.00

    This Small Business Innovation Research (SBIR) Phase I project will demonstrate the feasibility of combining novel nanostructured cobalt-transition metal (Co/TM, TM= Ni, Pd, Pt, Au) multilayer films w ...

    SBIR Phase I 2010 National Science Foundation
  3. ULTRA-DENSE MAGNETORESISTIVE MASS MEMORY

    Amount: $492,143.00

    THE PROPOSED CONCEPT IS AN ULTRA-DENSE MAGNETORESISTIVE MASS MEMORY WITH AN ACCESS TIME OF A FEW MICROSECONDS, 100 MBYTES/SECOND DATA RATES, AND HIGH RELIABILITY DUE TO THE INHERENT RELIABILITY OF MAG ...

    SBIR Phase II 1991 National Aeronautics and Space Administration
  4. HIGHLY MAGNETORESISTIVE THIN FILM MULTILAYERS

    Amount: $49,978.00

    THE OBJECTIVE OF THIS PROPOSED PROGRAM IS TO SYNTHESIZE A THIN FILM MULTILAYER COMPOSITE MATERIAL WITH A VERY LARGE MAGNETORESISTIVE EFFECT - UP TO TEN TIMES THE 2.5% MAGNETORESISTANCE RATIO OF PERMAL ...

    SBIR Phase I 1990 National Science Foundation
  5. MAGNETORESISTIVE/HCTS MEMORY CELL FOR SUPERCOMPUTER MASS MEMORY

    Amount: $215,851.00

    THIS RESEARCH WILL SHOW FEASIBILITY FOR A NEW MEMORY CELL USING MAGNETIC FILMS AND HIGH CRITICAL TEMPERATURE SUPERCONDUCTORS (HCTS) WHICH IS PARTICULARLY SUITABLE FOR SUPERCOMPUTER MASS MEMORIES. MAGN ...

    SBIR Phase II 1991 National Science Foundation
  6. SOLID STATE DIGITAL VOICE/DATA RECORDER

    Amount: $49,937.00

    MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) IS USED TO CREATE A VERY RELIABLE NONVOLATILE RECORDING DEVICE CONCEPT SUITABLE FOR STORING AT LEST 15 MINUTES OF AIRCRAFT FLIGHT DATA ALONG WITH ONE CHANN ...

    SBIR Phase I 1990 NavyDepartment of Defense
  7. IN-PLACE DATA RECORDER FOR AIRCRAFT TRANSPARENCY SYSTEMS

    Amount: $595,666.00

    BY UTILIZMG MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) IN COMBINATION WITH SENSOR TECHNOLOGIES, NVE WILL DESIGN A COMPLETE DATA GATHERING AND STORAGE SYSTEM FOR AIRCRAFT TRANSPARENCY SYSTEMS WHICH W ...

    SBIR Phase II 1993 Air ForceDepartment of Defense
  8. Controlled Anti-Ferromagnetic Coupling in Giant Magnetoresistance Materials

    Amount: $285,000.00

    The measurement of infrared spectra can develop the composition and temperature of a target object. It can also determine the concentration of gases along a measurement path, or the size of particles ...

    SBIR Phase II 1993 Missile Defense AgencyDepartment of Defense
  9. Nanometer Magnetoresistive Random Access Memory

    Amount: $275,000.00

    New cell concepts using better magnetoresistive material will make Magnetoresistive Random Access Memory (MRAM) denser for the same lithography than other semiconductor solid state memories such as DR ...

    SBIR Phase II 1993 Missile Defense AgencyDepartment of Defense
  10. INTEGRATED MULTI-TRACK GMR READ/WRITE HEAD WIT CMOS-SOS CIRCUITRY

    Amount: $299,980.00

    AN INTEGRATED MULTITRACK READ/WRITE HEAD AND ASSOCIATED CIRCUITRY SUITABLE FOR HIGH PERFORMANCE (100 MHZ), ULTRAHIGH DENSITY (2X10(9) BITS/IN(2)) RECORDING IS BEING DESIGNED. THE MAGNETORESISTIVE SENS ...

    SBIR Phase II 1995 National Science Foundation

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