Nanometer Magnetoresistive Random Access Memory

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$275,000.00
Award Year:
1993
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Award Id:
18039
Agency Tracking Number:
18039
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
12800 Industrial Park Blvd.,, Suite 110, Plymouth, MN, 55441
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Kurt E. Spears
(612) 550-0913
Business Contact:
() -
Research Institute:
n/a
Abstract
New cell concepts using better magnetoresistive material will make Magnetoresistive Random Access Memory (MRAM) denser for the same lithography than other semiconductor solid state memories such as DRAM, EEPROM, and flash, while retaining the advantages of both nonvolatility (saving data with no power) and durability (with infinite write- and read-cycling). Area densities of ten thousand million bits/cm2 will be achieved using 0.05 micron E-beam lithography. With these new cells, it may be possible to replace the present three level hierarchy (main, disk buffer, and disk memories) in computers with a single MRAM, radically improving system performance, size and weight, reliability, and cost. In Phase I the memory cell will be designed and simulated, and initial process defintion completed. In Phase II, the cells will be demonstrated.

* information listed above is at the time of submission.

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