INTEGRATED MULTI-TRACK GMR READ/WRITE HEAD WIT CMOS-SOS CIRCUITRY

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$299,980.00
Award Year:
1995
Program:
SBIR
Phase:
Phase II
Contract:
n/a
Agency Tracking Number:
21701
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Nonvolatile Electronics Inc.
12800 Industrial Pk Blvd #110, Plymouth, MN, 55441
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Arthur V Pohm
(612) 550-0913
Business Contact:
() -
Research Institution:
n/a
Abstract
AN INTEGRATED MULTITRACK READ/WRITE HEAD AND ASSOCIATED CIRCUITRY SUITABLE FOR HIGH PERFORMANCE (100 MHZ), ULTRAHIGH DENSITY (2X10(9) BITS/IN(2)) RECORDING IS BEING DESIGNED. THE MAGNETORESISTIVE SENSOR USES GIANT MAGNETORESISTANCE RATIO (GMR) MATERIAL, WHICH PROVIDES A MUCH HIGHER SIGNAL (ABOUT TEN TIMES) COMPARED WITH STANDARD MATERIALS BECAUSE OF HIGHER MAGNETORESISTANCE AND HIGHER SHEET RESISTIVITY. THE ORIENTATION OF THE SENSOR WILL BE ORTHOGONAL TO THE ORIENTATION OF THE SENSORS IN USE TODAY FOR IMPROVED RELIABILITY AND HIGHER DENSITY. THE ASSOCIATED CIRCUITRY IS BEING DESIGNED USING CMOS ON A SUBSTRATE OF SILICON ON SAPPHIRE (SOS) WHICH HAS BOTH FAVORABLE WEAR CAPABILITY AND LOWER PARASITIC CAPACITANCES THAN SILICON, AND HENCE WILL IMPROVE THE ELECTRICAL PERFORMANCE OF THE ON-CHIP CIRCUITRY. SENSORS FOR SERVO TRACKS ARE INCLUDED IN THE DESIGN. THE HEAD WILL BE DESIGNED, AND SATISFACTORY GMR MATERIALS WILL BE DEMONSTRATED ON A SUBSTRATE COMPRISED OF PERMALLOY SHIELDING MATERIAL ON SOS.

* information listed above is at the time of submission.

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