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Core Memory Replacement Using MRAM

Award Information
Agency: National Aeronautics and Space Administration
Branch: N/A
Contract: N/A
Agency Tracking Number: 22794
Amount: $69,833.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 1994
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
11409 Valley View Road
Eden Prairie, MN 55344
United States
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Arthur V. Pohm
 (612) 550-0913
Business Contact
Phone: () -
Research Institution

Magnetoresistive Random Access Memory (MRAM) provides a magnetic core memory replacement that is the ideal spacequalifiable memory. Core is no longer suited to space applications because of its large form factor, weight, low density and high power requirements. MRAM is a semiconductor based memory with all the attributes of core (nonvolatile, no wearout, fast R/W, inherently rad-hard, temperature insensitive), and none of the drawbacks. MRAM can be as dense as DRAM, is low power, and has the ruggedness and light weight of monolithic semiconductors, making it the ideal memory for use in tough environments seen by tactical, space, and strategic military systems. The Phase I effort is to modify an existing 1 Megabit MRAM design, to make it suitable for the extreme environment of core memory replacement (space application). Phase II would include layout of the modifications, design verification, two preproduction processing runs of the chips, and testing. The objective is development of a production ready 1-Meg chip. Benefits would include the ability to replace several technologies with a single, superior technology that requires no band-aids for use in severe environments.

* Information listed above is at the time of submission. *

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