Low Cost Writeable RFID Tag with MRAM Memory
Department of Defense
Defense Advanced Research Projects Agency
Agency Tracking Number:
Solicitation Topic Code:
Small Business Information
Nonvolatile Electronics, Inc.
12800 Industrial Park Blvd.,, Suite 110, Plymouth, MN, 55441
Socially and Economically Disadvantaged:
AbstractWireless communications with RFID tags is used for numerous tracking and identification purposes, with many new applications on the horizon. Unfortunately, low cost tages are handicapped by read-only capabilities. This limits their potential applications base, particularly in private/secure communications areas, where the ability to periodically rewrite a security code is desirable. Magnetoresistive Random Access Memory (MRAM) is the ideal Read/Write memory for inclusion on RFID tags because it requires a lower write energy than any other nonvolatile memory technology. This allows energy from the RF transmission to be used for writing, as well as reading the memory cells. In addition, the magnetic materials used in the MRAM memory cells are available during routine inductor (antennae), obviating the need for an add-on device, and reducing RFID tag cost. This proposed work will result in the fabrication of a high quality on chip inductor, fabrication of low energy MRAM memory cells, design of a low cost, writeable RFID tag using the inductor and the MRAM memory cells, and design of an RFID Reader/Writer for integating the tag information into a wireline communications network. Anticipated Benefits: Extremely broad applications base includes military personnel and equipment ID tags, updateable medical record tags, Intelligent Vehicle Highway System (IVHS) communication interfaces, implantable medical devices, retail trade tracking and anti-theft devices.
* information listed above is at the time of submission.