LOW MAGNETIC FIELD SENSING DEVICE

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$64,480.00
Award Year:
1994
Program:
SBIR
Phase:
Phase I
Contract:
n/a
Agency Tracking Number:
27482
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
Nonvolatile Electronics Inc.
11409 Valley View Rd, Eden Prairie, MN, 55344
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
James M Daughton
(612) 829-9217
Business Contact:
() -
Research Institution:
n/a
Abstract
A NOVEL MAGNETIC FIELD SENSING DEVICE WHICH USES THE MAGNETIC STRAY FIELD FROM A NEEL WALL IN A SOFT (LOW COERCIVITY) MAGNETIC THIN FILM TO BIAS A GIANT MAGNETORESISTANCE RATIO (GMR) SENSOR LAYER, THEREBY PROVIDING A HIGH RESISTANCE CHANGE IN THE SENSOR LAYER WITH A LOW APPLIED FIELD IS BEING INVESTIGATED. PRECISE LITHOGRAPHY (<0.5 MUM) IS REQUIRED TO ETCH THE SENSOR LAYER TO THE PROPER WIDTH AND TO LOCATE THE SENSOR PROPERLY WITH RESPECT TO A DOMAIN WALL IN THE SOFT LAYER. TECHNIQUES TO CONTROL THE POSITION OF THE DOMAIN WALL WILL BE EXPLORED. A DEMONSTRATION DEVICE WILL DEMONSTRATE THE FEASIBILITY OF THE CONCEPT AND SHOW AT LEAST A 5 PERCENT CHANGE IN RESISTANCE FOR AN APPLIED FIELD OF 2 OE OR LESS. THIS DEMONSTRATION WILL ALSO CLEARLY SHOW THAT 10 PERCENT OR HIGHER MAGNETORESISTANCE IS FEASIBLE WITH LESS THAN ONE OE OF APPLIED FIELD.

* information listed above is at the time of submission.

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