High Density Shock Survivable Microelectronics

Award Information
Agency:
Department of Defense
Amount:
$749,869.00
Program:
SBIR
Contract:
N/A
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Air Force
Award Year:
1997
Phase:
Phase II
Agency Tracking Number:
32367
Solicitation Topic Code:
N/A
Small Business Information
Nonvolatile Electronics, Inc.
11409 Valley View Road, Eden Prairie, MN, 55344
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Robert A. Sinclair
 (612) 829-9217
Business Contact
Phone: () -
Research Institution
N/A
Abstract
A packaging system and process for minimizing the volume of shock hardened components will be designed and developed. Different multi-chip module (MCM) approaches will be investigated including laminate (MCM-L), ceramic (MCM-C), deposited thin film (MCM-D), and hybrids of the two (MCM-C/D). In addition, micro ball grid arrays on folded elastomeric substrates, 3-D High Density Interconnect (HDI) technology, and Stacked Silicon (SS) technologies will be evaluated. Samples of the selected technology will be tested with NVE's High G Tester (HGT) to prove their survivability. Increasing density by combining functions for a typical data recorder application on a single die will also be investigated such as incorporating a 32K x 8 high speed non-volatile memory, an analog-to-digital converter, and microprocessor on the same die using NVE's integrated circuit design technology. This chip could then be incorporated with the technology selected into an ultra dense stacked 3-D multichip module. NVE's new Magnetoresistive Random Access Memory (MRAM) technology would be studied for use in the 32K x 8 nonvolatile memory by shock testing arrays to insure that the bit designs were immune to magnetostriction. The results of this study would lead to an ultra-dense, high shock, programmable data recorder during a Phase II effort.

* information listed above is at the time of submission.

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