Model-Guided Development of Spin-Dependent-Tunnel Junctions for Magnetoelectronic Devices

Award Information
Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Amount:
$520,099.00
Award Year:
2005
Program:
STTR
Phase:
Phase II
Contract:
W31P4Q-05-C-R141
Agency Tracking Number:
00-0100T
Solicitation Year:
2002
Solicitation Topic Code:
NSF02-056 EL
Solicitation Number:
N/A
Small Business Information
NVE CORP. (FORMERLY NONVOLATILE ELECTRON
11409 Valley View Road, Eden Prairie, MN, 55344
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
114264351
Principal Investigator
 Dexin Wang
 Senior Physicist
 (952) 996-1608
 dexinw@nve.com
Business Contact
 Richard George
Title: CFO
Phone: (952) 996-1602
Email: dickg@nve.com
Research Institution
 UNIV. OF VIRGINIA
 Gerald Kane
 1001 North Emmet Street
Charlottesville, VA, 22904
 (434) 924-4270
 Nonprofit college or university
Abstract
This Small Business Technology Transfer Phase II Program will demonstrate a magnetic field sensor device of high sensitivity using spin-dependent tunnel (SDT) materials. The tunnel materials will be developed with guidance from the state of the art realistic atomistic modeling and aided by state of the art nanostructural characterization techniques of 3-D atom probe and high-resolution transmission electron microscopy. Due to the unique requirements of the thin tunnel barrier (~1nm) and its interfaces with two ferromagnetic layers, experimental approach itself is inefficient in developing new junctions. There is a critical need for realistic modeling in guiding junction fabrication, and this project is specifically designed for the purpose. A robust realistic atomistic model has been established and a record high TMR value has been achieved experimentally in the Phase I. In Phase II the model will be perfected and extensive simulation and experiments will be conducted to optimize the tunnel junctions. With NVE''''''''s experience in experimentally developing SDT devices, UVA''''''''s expertise in realistic atomistic simulation and nanostructural characterization, and U of Oxford''''''''s renowned 3-D atomic probe imaging, as well as our past collaborations among the team members, the model-guided approach has a high potential for success.

* information listed above is at the time of submission.

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