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Radiation-Hardened Non-Volatile RAM

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: F33615-02-C-4006
Agency Tracking Number: 011NM-1412
Amount: $1,124,967.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
11409 Valley View Road
Eden Prairie, MN 55344
United States
DUNS: 114264351
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Robert Sinclair
 Senior Staff Engineer
 (952) 996-1616
Business Contact
 James Daughton
Title: Chief Technical Officer
Phone: (952) 996-1607
Research Institution

Magnetoresistive Random Access Memory (MRAM) is a candidate for nonvolatile memory applications in DoD military, space systems, MILSATCOM, and commercial space systems. 2D memory organizations used to date have placed stringent requirements on uniformityand "disturb" sensitivity of the cells resulting in poor manufacturing yields. Several innovations in memory architecture and cell structure in this proposed program will enhance manufacturability. A memory element consists of two magnetic filmsseparated by a thin ruthenium layer, with one of the film layers forming a tunnel junction with a pinned synthetic antiferromagnet for non-destructive read-out (NDRO). Selection of a cell for writing is accomplished through a select transistor, with asingle write current passing through only one magnetic film sandwich in an array. The memory cell can be configured from a single element for high speed, or from two elements for higher density. Low write currents of 2.5 mA have been achieved with 3 nsswitching. Niche memory products and reconfigurable elements are also potential applications. Its scalability could also allow densities of 16 megabits per square centimeter using 0.15 micron lithography. NVE's backend process will complete the SDTmaterial fabrication with the front end processing being provided by a radiation hard foundry.

* Information listed above is at the time of submission. *

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