Radiation-Hardened Non-Volatile RAM

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$1,124,967.00
Award Year:
2002
Program:
SBIR
Phase:
Phase II
Contract:
F33615-02-C-4006
Award Id:
52266
Agency Tracking Number:
011NM-1412
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
11409 Valley View Road, Eden Prairie, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
114264351
Principal Investigator:
Robert Sinclair
Senior Staff Engineer
(952) 996-1616
bobsin@nve.com
Business Contact:
James Daughton
Chief Technical Officer
(952) 996-1607
Daughton@nve.com
Research Institute:
n/a
Abstract
Magnetoresistive Random Access Memory (MRAM) is a candidate for nonvolatile memory applications in DoD military, space systems, MILSATCOM, and commercial space systems. 2D memory organizations used to date have placed stringent requirements on uniformityand "disturb" sensitivity of the cells resulting in poor manufacturing yields. Several innovations in memory architecture and cell structure in this proposed program will enhance manufacturability. A memory element consists of two magnetic filmsseparated by a thin ruthenium layer, with one of the film layers forming a tunnel junction with a pinned synthetic antiferromagnet for non-destructive read-out (NDRO). Selection of a cell for writing is accomplished through a select transistor, with asingle write current passing through only one magnetic film sandwich in an array. The memory cell can be configured from a single element for high speed, or from two elements for higher density. Low write currents of 2.5 mA have been achieved with 3 nsswitching. Niche memory products and reconfigurable elements are also potential applications. Its scalability could also allow densities of 16 megabits per square centimeter using 0.15 micron lithography. NVE's backend process will complete the SDTmaterial fabrication with the front end processing being provided by a radiation hard foundry.

* information listed above is at the time of submission.

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