High Speed Linear Spin-Valve Sensors for Analog Isolator Applications

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$97,780.00
Award Year:
2001
Program:
SBIR
Phase:
Phase I
Contract:
F29601-01-C-0116
Award Id:
52260
Agency Tracking Number:
011NM-0515
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
11409 Valley View Road, Eden Prairie, MN, 55344
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
114264351
Principal Investigator:
Zhenghong Qian
ThinFilmMagneticsEngineer
(952) 918-1151
zqian@nve.com
Business Contact:
James Daughton
President
(952) 996-1607
daughton@nve.com
Research Institution:
n/a
Abstract
This Small Business Innovation Research Phase I project will demonstrate two types of linear spin-valve sensors with excellent linearity and sensitivity as well as optimized bias points, and will also demonstrate the feasibility of their application inanalog isolator devices. The first type of linear spin-valve sensor will be designed similarly to a spin-valve recording head. The second type of linear spin-valve sensor will be designed and fabricated using a novel approach with a free ferromagnetic (FM)layer exchange-biased with an antiferromagnetic (AF) layer. The sensor performance will be optimized by materials selection and process control as well as magnetic design. The ultimate goal in this program is to fabricate and demonstrate analog isolatordevices using linear spin-valve sensors developed in Phase I. The current NVE digital isolator process will be modified into an analog isolator process for this purpose. The success of this Phase I project will provide a solid framework for the Phase IIto build high speed, linear radiation-hard analog isolator devices.The linear spin-valve sensors developed in this research has immediate application in NVE's isolator technology, which will lead to the addition of the analog isolator devices into itsisolator product catalog. In addition, the linear spin-valve materials can also be used in field sensors and read head devices.

* information listed above is at the time of submission.

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