Magneto-Thermal MRAM

Award Information
Agency: Department of Defense
Branch: Defense Threat Reduction Agency
Contract: HDTRA2-04-C-0002
Agency Tracking Number: 02-0128
Amount: $499,983.00
Phase: Phase II
Program: SBIR
Awards Year: 2004
Solicitation Year: 2002
Solicitation Topic Code: BMDO02-004
Solicitation Number: 2002.1
Small Business Information
NVE CORP. (FORMERLY NONVOLATILE ELECTRON
11409 Valley View Road, Eden Prairie, MN, 55344
DUNS: 842736142
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 James Daughton
 Chief Technical Officer
 (952) 996-1607
 daughton@nve.com
Business Contact
 James Daughton
Title: Chief Technical Officer
Phone: (952) 996-1607
Email: daughton@nve.com
Research Institution
N/A
Abstract
Magneto-Thermal MRAM uses both heat and magnetic field (current)to overcome thermal instabilities of very small memory cells. Self-generated heat in the cell raises the temperature of magnetic material in the cell above the exchange ordering temperature of the magnetic material (either ferromagnetic or anti-ferromagnetic). Magneto-Thermal MRAM is compatible with advances in photolithography down to 0.05 micron to provide nonvolatile random access memory at DRAM densities. Because there is no irreversible change in lattice or phase during writing, no write fatigue is anticipated. The proposed work will concentrate on materials and process developments to demonstrate reliability and cell performance compatible with read and write speeds of approximately 50 ns and a realistic chip capacity of 1 gigabit are expected using 0.1 micron lithography. A small, working memory array and a conceptual design (compatible with demonstration array data) will show that Magneto-Thermal MRAM can provide high density nonvolatile memory at least through the next decade.

* information listed above is at the time of submission.

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