Ultra-Sensitive Spin Dependent Tunneling Devices Without Biasing

Award Information
Agency:
Department of Defense
Amount:
$699,998.00
Program:
SBIR
Contract:
DTRA01-02-C-0070
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Missile Defense Agency
Award Year:
2003
Phase:
Phase II
Agency Tracking Number:
02-0160
Solicitation Topic Code:
N/A
Small Business Information
NVE Corp.
11409 Valley View Road, Eden Prairie, MN, 55344
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
N/A
Principal Investigator
 Dexin Wang
 Senior Physicist
 (952) 996-1608
 dexinw@nve.com
Business Contact
 James Daughton
Title: Chief Technical Officer
Phone: (952) 996-1607
Email: daughton@nve.com
Research Institution
N/A
Abstract
The popularity of nanotechnology symbolizes a rapid shrinking of physical dimensions in solid state devices. However, the diminishing sizes will eventually lead to problems including thermal instability. Our proposed proprietary approach takes advantagesof the nanometer-size especially for magnetic portions of the devices. This approach will work until the lateral dimensions of the devices become less than about 10 nm. This is many generations beyond the state of the art photolithography capability (100nm for year 2001) spearheaded by the semiconductor industry. The final device will have hysteresis free output with very high sensitivity, requires no biasing thus very-low power consumption, be very small in sizes, and never change after excursion fields.In the Phase I, NVE and MINT/UA have developed the basic materials and processes for this technology. In the Phase II we will develop prototype devices using this material and using microelectronics fabrication techniques that are suitable for massproduction. The devices will be especially suitable for low field and low power applications such as solid state compass, magnetic medium detection, nondestructive evaluation, biomedical chips, and remote sensing.

* information listed above is at the time of submission.

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