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SBIR/STTR Phase I: Model-Guided Development of Spin-Dependent-Tunnel Junctions for Magnetoelectronic Devices

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: 0214719
Agency Tracking Number: 0214719
Amount: $100,000.00
Phase: Phase I
Program: STTR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 2002
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
11409 Valley View Road
Eden Prairie, MN 55344
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Dexin Wang
 (952) 996-1608
 dexinw@nve.com
Business Contact
 Richard George
Phone: () -
Email: dickg@nve.com
Research Institution
 U of Vorginia
 Xiaonwang Zhou
 
School of Engineering & Applied Science 116 Engineer's Way, P.O. Box 400745
Charlottesville, VA 22904
United States

 (804) 982-4580
 Nonprofit College or University
Abstract

This Small Business Technology Transfer Phase I Program will demonstrate the feasibility of model-guided approach for developing spin dependent tunnel junctions in magnetoelectronic devices. Spin dependent tunnel junctions are at the forefront of nanotechnology that is under intensive research and development worldwide. Spin dependent tunnel devices are expected to be commercialized in about two years in sensor, isolator, and memory. Due to the unique requirements of the tunnel barrier with a nominal thickness of ~1nm and its interfaces with two ferromagnetic layers, an experimental approach by itself is inefficient in developing new junctions. There is a critical need for guidance from a realistic modeling in the fabrication processing, and this project is specifically designed to fulfill this need. Realistic atomistic modeling will be established and experiments will be judicially chosen to demonstrate the feasibility of this integrated approach.

* Information listed above is at the time of submission. *

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