Ultra-scaleable Vertical Transport GMR Devices

Award Information
Agency:
Department of Defense
Amount:
$69,998.00
Program:
SBIR
Contract:
N00014-02-M-0113
Solitcitation Year:
N/A
Solicitation Number:
N/A
Branch:
Navy
Award Year:
2002
Phase:
Phase I
Agency Tracking Number:
N02-055-06
Solicitation Topic Code:
N/A
Small Business Information
Nve Corp. (Formerly Nonvolatile Electronics, Inc.
11409 Valley View Road, Eden Prairie, MN, 55344
Hubzone Owned:
N
Woman Owned:
N
Socially and Economically Disadvantaged:
N
Duns:
114264351
Principal Investigator
 John Anderson
 Program Manager
 (952) 829-9217
 johna@nve.com
Business Contact
 James Daughton
Title: Chief Technical Officer
Phone: (952) 829-9217
Email: daughton@nve.com
Research Institution
N/A
Abstract
"This SBIR Phase I proposal, "Ultra-scaleable Vertical Transport GMR Devices," addresses the need for ultra-submicron Giantmagnetoresistive (GMR) cells in high-density nonvolatile MRAM. The Navy particularly displays need for this technology in theirvertical memory effort. Issues that complicate submicron memory cells are twofold. First, is the need to pattern magnetic devices at, or below, the limits of projected semiconductor processes. Second, and most critical, is that at the dimensionsrequired for high-density MRAM, below 0.1 micron, thermal instability and thermal dissipation cause crippling failure rates. NVE proposes to resolve these issues by building ultra-submicron cells that take advantage of thermal dissipation. In addition,the program will investigate parallel processes to replace ebeam, which will become critical in Phase II development and Phase III production. Phase I technical objectives are (A) design thermally assisted test cells; (B) fabricate test cells using ebeam;(C) characterize the cells for functionality and to profile the process; and (D) outline a parallel fabrication process that will be employed in the Phase II development effort. The results of the Phase I effort will demonstrate ultra-submicron memorytest cells and provide a path for prototype production in Phase II. Vertical MRAM is applicable in general ultra-dense, nonvolatile random-access memory, "inaccessible"or non-retrievable informatio

* information listed above is at the time of submission.

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