BMDO TOPIC -- Magneto-Thermal MRAM

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$387,072.00
Award Year:
2003
Program:
SBIR
Phase:
Phase II
Contract:
DAAH0103CR243
Agency Tracking Number:
02SB1-0319
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
NVE CORP. (FORMERLY NONVOLATILE ELECTRON
11409 Valley View Road, Eden Prairie, MN, 55344
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
114264351
Principal Investigator:
James Daughton
Chief Technical Officer
(952) 996-1607
daughton@nve.com
Business Contact:
James Daughton
Chief Technical Officer
(952) 996-1607
daughton@nve.com
Research Institution:
n/a
Abstract
Magneto-Thermal MRAM uses both heat and magnetic field (current) to overcome thermal instabilites of very small memory cells. Self-generated heat in the cell raises the temperature of magnetic material in the cell above the exchange ordering temperature ofthe magnetic material (either ferromagnetic or anti-ferromagnetic). Magneto-Thermal MRAM is compatible with advances in photolithography down to 0.05 micron to provide nonvolatile random access memory at DRAM densities. Because there is no irreversiblechange in lattice or phase during writing, no writing fatigue is anticipated. The proposed work will concentrate on materials and process developments to deomonstrate reliability and cell performance compatible with read and write speeds of approximately50 ns and a realistic chip capacity of 1 gigabit are expected using 0.1 micron lithography. A small, working memory array and conceptual design (compatible with domonstration array data) will show that Magneto-Thermal MRAM can provide high densitynonvolatile memory at least through the next decade.

* information listed above is at the time of submission.

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