Novel Materials for Ultra-Sensitive Low-Frequency Magnetometers

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N00014-05-M-0284
Agency Tracking Number: N054-025-0272
Amount: $99,993.00
Phase: Phase I
Program: STTR
Awards Year: 2005
Solicitation Year: 2005
Solicitation Topic Code: N05-T025
Solicitation Number: N/A
Small Business Information
NVE CORP. (FORMERLY NONVOLATILE ELECTRON
11409 Valley View Road, Eden Prairie, MN, 55344
DUNS: 114264351
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Catherine Nordman
 Design Engineer
 (952) 996-1629
 cathyn@nve.com
Business Contact
 Richard George
Title: CFO
Phone: (952) 996-1602
Email: dickg@nve.com
Research Institution
 UNIV. OF DELAWARE
 Geraldine Hobbs
 Dept. of Physics and Astronomy, University of Delaware
Newark, DE, 19716
 (302) 831-8618
 Nonprofit college or university
Abstract
This work seeks to develop the ultra-low-frequency performance of spin-dependent-tunneling magnetic-field sensors through the use of novel thin-film materials to lower the frequency-dependent excess noise and increase the signal response. What is proposed is an investigation of novel thin film materials recently discovered to have high magnetoresistance effects. Magnetic sensor devices will be fabricated and their intrisinic noise spectrums will be qualitatively compared with the state-of-the-art Al2O3 barriers. Combinations of the thin-film materials and deposition conditions that prove the greatest potential for substantially increasing the sensor's signal-to-noise ratio (SNR) will be chosen for the Phase II prototype development. The goal of the program is to produce a magnetic-field sensor element which resolves sub-nanoTesla field perturbations at milliHertz frequencies. The emerging technology of spin-dependent tunneling devices is ideal in that it has great potential for increasing SNR at low frequency and its inherent attributes include: low power, small size, low cost, IC compatiblility, ruggedness, standard microelectronics processing, and broad-band frequency resolution.

* information listed above is at the time of submission.

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