Passive Anti-Tamper Latching Stress Sensors for Volume Protection

Award Information
Agency:
Department of Defense
Branch
Missile Defense Agency
Amount:
$99,998.00
Award Year:
2007
Program:
SBIR
Phase:
Phase I
Contract:
W9113M-07-C-0043
Agency Tracking Number:
B063-052-0314
Solicitation Year:
2006
Solicitation Topic Code:
MDA06-052
Solicitation Number:
2006.3
Small Business Information
NVE CORP. (FORMERLY NONVOLATILE ELECTRON
11409 Valley View Road, Eden Prairie, MN, 55344
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
114264351
Principal Investigator:
James Deak
Senior Physicist
(952) 996-1636
jdeak@nve.com
Business Contact:
Richard George
Director, Government Contracts
(952) 996-1602
dickg@nve.com
Research Institution:
n/a
Abstract
This Small Business Innovation Research Phase I proposal describes a latching anti-tamper (AT) stress sensor (LATSS) for volumetric protection of military systems. LATSS devices are intended to passively detect and remember if a change in some mechanical aspect of the shield enclosing a protected volume has occurred and provide a signal that can be queried to report the change. They are based on spin dependent tunnel (SDT) junctions utilizing magnetostrictive ferromagnetic electrodes. Magnetostrictive SDT junctions provide a unique combination of capabilities for an AT sensor. The hysteretic magnetic behavior of the SDT electrodes provides the capability to record a change in stress without applied power. The magnetoresistance of the SDT junctions permits electrical readout of the orientation of the magnetization of the ferromagnetic sensor electrodes, which is set by magnetostrictive coupling to the substrate strain. SDT devices can be fabricated using standard back end of line semiconductor processes, potentially making LATSS a low cost volumetric AT solution. Because of their small size, several LATSS devices could be combined on the same substrate to produce a cryptokey memory, providing a new class of passive tamper-responsive cryptokey memory. Additionally, SDT materials are intrinsically radiation hard, permitting development of radiation hard LATSS devices.

* information listed above is at the time of submission.

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