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Radiation-Hard Anti-Tamper Magnetic Patch Memory

Award Information
Agency: Department of Defense
Branch: Missile Defense Agency
Contract: W9113M-07-C-0089
Agency Tracking Number: B063-050-0530
Amount: $99,986.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: MDA06-050
Solicitation Number: 2006.3
Solicitation Year: 2006
Award Year: 2007
Award Start Date (Proposal Award Date): 2007-02-28
Award End Date (Contract End Date): 2007-08-28
Small Business Information
11409 Valley View Road
Eden Prairie, MN 55344
United States
DUNS: 114264351
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 James Deak
 Senior Physicist
 (952) 996-1636
Business Contact
 Richard George
Title: Director, Government Contracts
Phone: (952) 996-1602
Research Institution

This Small Business Innovation Research Phase I project proposal describes a program to research and develop a method for producing a radiation-hard solid-state Magnetic Patch Memory (MPM) deposited on top of a wafer from an untrusted facility and programmed in a trusted facility. MPM can be erased with zero remanence in the event of tampering to render the device it protects impossible to reverse engineer. MPM technology can be added at back end of line processing onto any silicon based complex components that might be produced in foreign foundries. It is ideal for storing encryption keys or codes for digital rights management schemes. Although MPM is a solid-state memory, it is designed using magnetic media similar to a hard disk drive that permits it to be erased with remanent signature reduction exceeding that required for erasure of media containing SECRET data. Depending in the specific application, the proposed MPM can be erased electronically by the system it protects using a current or magnetically in bulk using a degausser or permanent magnet. MPM technology uses thin film magnetic materials and spin dependent tunneling (SDT) sensors that are intrinsically radiation hard.

* Information listed above is at the time of submission. *

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