Zero-Remanence Anti-Tamper Cryptokey Storage Device

Award Information
Agency: Department of Defense
Branch: Army
Contract: W31P4Q-08-C-0270
Agency Tracking Number: O053-A11-2129
Amount: $747,924.00
Phase: Phase II
Program: SBIR
Awards Year: 2008
Solicitation Year: 2005
Solicitation Topic Code: OSD05-A11
Solicitation Number: 2005.3
Small Business Information
NVE CORP. (FORMERLY NONVOLATILE ELECTRON
11409 Valley View Road, Eden Prairie, MN, 55344
DUNS: 114264351
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 James Deak
 Senior Physicist
 (952) 996-1636
 jdeak@nve.com
Business Contact
 John Myers
Title: Vice President of Develop
Phone: (952) 996-1610
Email: jmyers@nve.com
Research Institution
N/A
Abstract
This Small Business Innovation Research project proposal describes a program to develop a low-power, fast, non-volatile anti-tamper (AT) memory, sufficient in size for storing encryption keys that has the capability to self-erase with no data remanence and without applied power in response to tampering with the enclosure of a protected volume. The AT memory will also include an electrically programmed rapid bulk erase capability, as well as a signal line to indicate that a tampering event has been detected. The device, called an anti-tamper magnetic random access memory (AT-MRAM) is intended for volume protection of military electronics systems by providing the capability to detect and respond to invasive tampering of a protected volume by irrecoverably erasing a long unique code stored within the AT-MRAM. The AT-MRAM prototype will be implemented as a stand-alone 256-bit cryptokey memory for volumetric anti-tamper applications, and with further research and development the memory capacity could be increased to hold data other than encryption keys.

* information listed above is at the time of submission.

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