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High Performance High Current CW polarized photocathodes for Electron Ion Colliders

Award Information
Agency: Department of Energy
Branch: N/A
Contract: DE-SC0022416
Agency Tracking Number: 0000271376
Amount: $1,150,000.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: C53-34d
Solicitation Number: N/A
Timeline
Solicitation Year: 2023
Award Year: 2023
Award Start Date (Proposal Award Date): 2023-04-03
Award End Date (Contract End Date): 2025-04-02
Small Business Information
201 Circle Drive North UNIT 102
Piscataway, NJ 08854-3723
United States
DUNS: 787144807
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 Kannan Vasudevan
 (732) 302-9274
 kannan.vasudevan@gmail.com
Business Contact
 Gary Tompa
Phone: (732) 302-9274
Email: gstompa@gmail.com
Research Institution
 Brookhaven National Laboratory (BNL)
 Ivar Strand
 
PO BOX5000
Upton, NY 11973-5000
United States

 Federally Funded R&D Center (FFRDC)
Abstract

C53-34d-271376Photocathodes with improved performance for the production of spin polarized electrons for delivering beams with average currents up to several mA with operational lifetimes >24 hours, longitudinal spin polarization greater than 90% and an initial quantum efficiency >5% at ~ 780nm are required for nuclear physics and other basic sciences application. Photocathodes delivering high bunch charges, > 100 pC/bunch, are required for the storage ring at the Electron Ion Collider (EIC) facilities. Spin polarized electron sources are currently based on strained III-V material (GaAs/GaAsP) layer-based photocathodes. The photocathodes Quantum Efficiency (QE) (i.e.the number of electrons produced per photon) depends on many parameters; including the defect density and is also limited by the weak photon absorption of the absorbing medium near the band edge. The Electron Spin Polarization efficiency (ESP) of the photocathode layer depends on the energy separation of the heavy hole and light hole bands, which is enhanced by the mechanical strain of the absorption layers. To simultaneously increase QE and ESP Structured Materials Industries Inc., (SMI) is fabricating a a III-V material structure that can effectively trap the light in thinner absorption layers that to increases quantum efficiency and spin polarization. Our Phase I performance demonstrated gallium arsenide phosphide-based material structured will be refined to achieve highest performance electron spin polarized photocathodes.Metalorganic chemical vapor deposition (MOCVD) techniques will be used to grow highly efficient structures to deliver highly efficient photocathodes; MOCVD has generally been proven to be faster and more effective in producing high-quality device layers than other techniques. The anticipated public benefits of this work include technical, economic, social, and other benefits to the public as a whole and advancement in science by advancing the capabilities to understand phenomenon at atomic scale resolution, generating new discoveries. This project will advance the nuclear physics sector with the development of high-energy electron accelerators, the possibility to study nuclei, quarks, and gauge bosons using the polarized electron sources produced here. Furthermore, the technology helps in enabling basic energy and medical sciences, understanding of the universe and also for the US to lead on cutting edge technology in the world.

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