High Frequency Optoelectronc Oscillator

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9453-06-C-0069
Agency Tracking Number: F051-043-0664
Amount: $749,952.00
Phase: Phase II
Program: SBIR
Solicitation Topic Code: AF05-043
Solicitation Number: 2005.1
Timeline
Solicitation Year: 2005
Award Year: 2006
Award Start Date (Proposal Award Date): 2006-04-05
Award End Date (Contract End Date): 2008-07-07
Small Business Information
22 Quail Run Road, Storrs/Mansfield, CT, 06268
DUNS: 005862623
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Jianhong Cai
 Senior Scientist
 (860) 486-3466
 laser242@hotmail.com
Business Contact
 Leon Pierhal
Title: President
Phone: (401) 338-1212
Email: leepierhal@aol.com
Research Institution
N/A
Abstract
Low phase noise oscillators are core components for communications and radars. System timing jitter is fundamentally important for digital systems and phase noise is the figure of merit for RF systems. For multi-GB/s clocks, optoelectronic oscillators using optical delay for the clock period, appear to have significant advantages. The phase noise may be minimized because the delay variability lies only in stability of the refractive index, providing low noise figure devices are available. The significant phase noise may then be relegated to the clock period adjustment mechanism and the RIN noise on the optical source. Optoelectronic oscillators have been reported that use a collection of lasers, modulators, delays and RF amplifiers. Although phase noise is improved, the system is bulky and power consumptive. OPEL’s integrated version is based upon a non-linear switching device that performs as both a laser source and detector. Monolithically integrated control HFETs and optical waveguides, enable an oscillator with minimal chip space and phase noise approaching the quantum limit, since the RIN noise is that of the VCSEL (-160dB/Hz). The control noise is only the shot noise on the injection current (<10fs jitter). The Phase II effort will fabricate and demonstrate the first multi-GB/s monolithic OEO.

* Information listed above is at the time of submission. *

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