Microwave-pumped GaAs far infrared photoconductor

Award Information
Agency:
National Aeronautics and Space Administration
Branch
n/a
Amount:
$70,000.00
Award Year:
2003
Program:
SBIR
Phase:
Phase I
Contract:
NAS2-03136
Agency Tracking Number:
022480
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
TechnoScience Corporation
P.O. Box 60658, Palo Alto, CA, 94306
Hubzone Owned:
N
Socially and Economically Disadvantaged:
N
Woman Owned:
N
Duns:
n/a
Principal Investigator:
Jam Farhoomand
Principal Investigator
(650) 852-9932
jfarhoomand@mail.arc.nasa.gov
Business Contact:
Jam Farhoomand
President & CEO
(650) 852-9932
jfarhoomand@mail.arc.nasa.gov
Research Institution:
n/a
Abstract
This proposal introduces an innovative concept which significantly enhances the performance of a far-infrared GaAs photoconductor. This method employs a microwave source, in the range of 90 to 120 GHz, to assist the photoionization process by pumping the infrared-generated electrons from the excited states to the continuum. Since the microwave photons are low in energy, they are not available to directly ionize the ground state of the shallow donors. Therefore, the microwave pumping process is not expected to generate additional leakage current and the associated noise. This will allow us to cool the detector as low as necessary to reduce the thermal leakage current and improve the detector's noise performance. The proposed concept is not limited to GaAs and may be applied in a broader scope. Since the excited state response of a photoconductor lies at lower frequencies (longer wavelengths), an important use of this method would be to extend the detector's long-wavelength response. For a photoconductor, such as Ge:Ga, whose excited state response is non-existent at its optimum operating temperature due to insufficient thermal energy, microwave pumping can provide the additional energy and essentially extend its long-wavelength response.

* information listed above is at the time of submission.

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