ErAs:GaAs Photomixers for High-Resolution THz Spectroscopy

Award Information
Agency: Department of Commerce
Branch: National Institute of Standards and Technology
Contract: N/A
Agency Tracking Number: 407-177
Amount: $74,972.00
Phase: Phase I
Program: SBIR
Awards Year: 2004
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
3700 Cedarbend Dr., Glendale, CA, 91214
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Elayne Brown
 (310) 713-8030
Business Contact
Phone: () -
Research Institution
A new type of THz photomixer will be developed using a submicron interdigitated-electrode structure fabricated on an Eras:GaAs ultrafast photoconductive layer, an AIAs heat spreader and an AIGas/AIAs dielecric mirror. The Eras:GaAs-based photomixer will provide extremely wide tuning bandwidth (>1 decade) and a continuous-wave output power of roughly 10 microwatt around 100 GHz, at least 1 microwatt and 1 THz, and > 100 nW between 2 and 3 THz. The research will focus on the materials growth and fabrication issues, the electrical and optical performance, and the reliability and packaging necessary to deliver working devices to NIST. COMMERCIAL APPLICATIONS: Phototmixer diodes for generation of coherent THz radiation between ~30 GHz and 3 THz. Will be the basis for a benchtop THz spectrometer without cryogens, high voltages, or high magnetic fields.

* Information listed above is at the time of submission. *

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