Commercial Methods for Production of Orientation Patterned GaAs

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: FA9550-08-C-0026
Agency Tracking Number: F064-010-0311
Amount: $499,968.00
Phase: Phase II
Program: STTR
Solicitation Topic Code: AF06-T010
Solicitation Number: N/A
Solicitation Year: 2006
Award Year: 2008
Award Start Date (Proposal Award Date): 2007-10-31
Award End Date (Contract End Date): 2009-10-31
Small Business Information
20 New England Business Center, Andover, MA, 01810
DUNS: 073800062
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 David Fenner
 Principal Research Scientist
 (978) 689-0003
Business Contact
 B. Green
Title: President, PSI R&D Operations
Phone: (978) 689-0003
Research Institution
 Linda Concino
 883 Broadway Street
Second Floor
Lowell, MA, 1854
 (978) 934-4723
 Nonprofit college or university
The Air Force desires development of a commercial production source for nonlinear optical (NLO) gallium arsenide semiconductor crystals with orientation patterning, i.e., OP-GaAs. The Phase I project has demonstrated feasibility for a fabrication method of OP-GaAs which exclusively utilizes processes anticipated to be available from commercial vendors and at Physical Sciences Inc (PSI). Molecular beam epitaxy (MBE), wafer bond-etch-and-pattern methods, and hydride vapor phase epitaxy (HVPE) are employed. Phase II will refine the fabrication steps toward both those methods known to be available from vendors, and toward OP-GaAs material that performs well within QPM assemblies of OPO for MWIR generation. The program team of Phase I brings together experts in the many technical areas required, and this distinguished team is proposed for the Phase II program. University of Massachusetts, Lowell, will provide processing and wafer bonding development. AFRL, Hanscom AFB, will collaborate with HVPE and a letter of support is included. PSI is a major player in the markets for ferroelectric NLO materials and devices as well in high-power IR laser-based systems and NLO converters. Thus, PSI is well placed to insert the OP-GaAs materials into laser systems with key market demand.

* Information listed above is at the time of submission. *

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