65-GHz Bandwidth 900-1600 nm Photodetector

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 26073
Amount: $679,121.00
Phase: Phase II
Program: SBIR
Awards Year: 1995
Solitcitation Year: N/A
Solitcitation Topic Code: N/A
Solitcitation Number: N/A
Small Business Information
Picotronix
PO Box 130243, Ann Arbor, MI, 48113
Duns: N/A
Hubzone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 Steve Williamson
 (313) 763-4879
Business Contact
Phone: () -
Research Institution
N/A
Abstract
The objective of this Phase I is to develop a novel 65-GHz bandwidth photodetector with high sensitivity between 900-1600 nm. This detector will have a response time of 5 ps, making it the fastest near-IR photodetector available. It will have a responsivity of 0.2 A/W and dark current < 50 nA, with an active area of 50x50 square micrometers. It will also be capable of generating signals with amplitudes exceeding 1 volt into 50 ohms. This detector will function like a photoconductor instead of a photodiode. Its speed will be derived from deep-level traps that form in InGaAs when grown under non-stoichiometric molecular-beam-epitaxy conditions. This technique has been applied by us to non-stoichiometric growth of GaAs to yield a 400-900 nm, metal-semiconductor-metal detector with 0.1 A/W sensitivity and 1 ps response time. This is the fastest visible photodetector in the world. During this Phase I we will develop the non-stoichiometric growth conditions for InGaAs. We will also use a newly developed 2-picosecond-resolution electrical probe to help design the ideal electrode geometries for both the detector and microwave launcher.

* information listed above is at the time of submission.

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