Advanced THz Materials for Nondestructive Evaluation (NDE)

Award Information
Agency:
Department of Defense
Branch
Air Force
Amount:
$100,000.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
FA8650-09-M-5425
Award Id:
92846
Agency Tracking Number:
F083-083-0876
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
2925 Boardwalk, Ann Arbor, MI, 48104
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
788133387
Principal Investigator:
David Zimdars
Manager of Terahertz Development
(734) 864-5639
dzimdars@picometrix.com
Business Contact:
Robin Risser
President and General Manager
(734) 864-5605
rrisser@picometrix.com
Research Institution:
n/a
Abstract
In this Phase I project, we will demonstrate the improvement of the time-domain-terahertz (TD-THz) transmitter output power of low temperature grown indium gallium arsenide (LT-InGaAs) based epitaxial layer structures excited by the 1060 nm lasers, such as that employed in the T-RayTM 4000 TD-THz instrumentation system. Prior to this SBIR proposal, Picometrix has developed and commercialized 1060 nm driven LT-InGaAs photoconductive material with performance equivalent to traditional 800 nm driven low temperature grown gallium arsenide (LT-GaAs). The goal of this Phase I SBIR project will be to increase the electric field within the THz transmitting antenna at least 10 times over Picometrix's current LT-InGaAs (or LT-GaAs) antenna by developing an enhanced LT-InGaAs photoconductive material. This emphasis on epitaxial growth and microfabrication during the first phase will provide the basis for a high-sensitivity THz transceiver that will make stand-off non-destructive evaluation (NDE) imaging possible during Phase II. BENEFIT: In phase II we will package the enhanced "high performance" LT-InGaAs transmitter materials into the Picometrix's standard telecommunications style miniature fiber pigtailed modules. These modules will provide greater than 10 times the electric field (and thereby a 10x increase in signal to noise) over the current generation of LT-InGaAs modules (or LT-GaAs modules). A Phase II prototype NDE stand-off imaging monostatic reflection TD-THz transceiver with 3-5 meter stand-off will be constructed, utilizing the new high performance modules. This will allow inspection of aircraft from the ground, without having to bring the instrument up near to the aircraft skin.

* information listed above is at the time of submission.

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