SBIR Phase I: Resist for DUV Lithography

Award Information
Agency:
National Science Foundation
Branch
n/a
Amount:
$150,000.00
Award Year:
2009
Program:
SBIR
Phase:
Phase I
Contract:
0945305
Award Id:
91158
Agency Tracking Number:
0945305
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
387 Technology Drive, Suite 3122, College Park, MD, 20742
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
148291391
Principal Investigator:
ZehraGonen Williams
DPhil
(301) 405-9267
sgonen@pixelligent.com
Business Contact:
ZehraGonen Williams
DPhil
(301) 405-9267
sgonen@pixelligent.com
Research Institute:
n/a
Abstract
This Small Business Innovation Research Phase I project is to demonstrate the feasibility of using semiconductor nanocrystals to produce a resist that responds quadratically to the exposure light intensity for optical lithography. More specifically, this project will develop semiconductor nanocrystals embedded in a polymer binder, together with an acid generator, as a resist for deep ultra-violet (DUV) manufacturing. This resist will improve the resolution of the lithography process and enable double exposure, which is urgently required in order to extend optical lithography beyond the 45 nm mode. The availability of this resist for 193 nm semiconductor wafer manufacturing will improve resolution and increase the single-exposure process window. More importantly, it will enable a cost-effective double exposure strategy, allowing fabrication of features beyond 45 nm with optical lithography, keeping the industry on the well-known Moore's law curve. A double exposure strategy keeps the industry from a disruption of Moore's law at the 32 nm node, and possibly beyond. It saves the industry from switching to more expensive and unreliable alternatives, such as extreme ultra-violet (EUV) lithography.

* information listed above is at the time of submission.

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