PLASMAS

Award Information
Agency: National Science Foundation
Branch: N/A
Contract: N/A
Agency Tracking Number: 1636
Amount: $39,000.00
Phase: Phase I
Program: SBIR
Awards Year: 1984
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
P.o. Box 548, Locust Valley, NY, 11560
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 JOHN H. COLEMAN
 PRESIDENT
 () -
Business Contact
 John H. Coleman
Title: President
Phone: () -
Research Institution
N/A
Abstract
IN ORDER TO MEET THE ACCELERATING MARKET DEMAND FOR VLSI SEMI-CONDUCTOR MEMORY AND LOGIC CIRCUITS, IT APPEARS AS THOUGH MAGNETICALLY CONFINED PLASMAS ARE REQUIRED IN ORDER TO ATTAIN ANISOTROPIC ETCHING AT A HIGH RATE. CURRENT HIGH-PRESSURE PLASMA SYSTEMS ETCH WITH A HIGH RATE BUT WITH POOR FEATURE CONFORMATION, WHILE REACTIVE ION ETCHERS ETCH ANISOTROPICALLY, BUT SLOWLY. THE PROPOSED SYSTEM USES A MAGNETRON CONFINEMENT GEOMETRY DISCOVERED BY THE PROPOSER SEVERAL YEARS AGO ON A GAS DIODE PROJECT WHERE IT WAS OBSERVED THAT SPUTTERING OF THE DIODE CATHODE WAS UNIFORM AND RAPID. WE PROPOSE TO APPLY THIS GEOMETRY TO ETCH VLSIC WITH ONE MICRON FEATURE SIZES IN THE SURFACE OF SEMICONDUCTOR WAFERS. SUCCESSFUL COMPLETION OF THIS APPARATUS WOULD BENEFIT THE CIRCUIT DESIGNERS, ENABLING FABRICATION OF HIGHER-DENSITY MEMORY CIRCUITS AND THE COMPETITIVE POSITION WORLD-WIDE OF THE NATION'S ELECTRONIC INDUSTRY WHOSE PRODUCTS ARE LIMITED BY THE RESOLUTION OF ETCH FEATURES IN CHIPS.

* Information listed above is at the time of submission. *

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