OPTICALLY ACTIVATED AVALANCHE MODE BULK SEMICONDUCTOR SWITCH

Award Information
Agency: Department of Defense
Branch: Navy
Contract: N/A
Agency Tracking Number: 4615
Amount: $190,500.00
Phase: Phase II
Program: SBIR
Awards Year: 1987
Solicitation Year: N/A
Solicitation Topic Code: N/A
Solicitation Number: N/A
Small Business Information
42660 Christy St, Fremont, CA, 94538
DUNS: N/A
HUBZone Owned: N
Woman Owned: N
Socially and Economically Disadvantaged: N
Principal Investigator
 () -
Business Contact
 LARRY RAGLE
Phone: () -
Research Institution
N/A
Abstract
THIS PROPOSAL DESCRIBES AN OPTICALLY ACTIVATED GALLIUM ARSENIDE BULK SEMICONDUCTOR SWITCH OPERATED IN THE AVALANCHEMODE. TWO 120 WATT FIBER-OPTICALLY COUPLED GALLIUM ARSENIDE LASER ARRAYS DRIVE THE SWITCH. THE DEVICE IS DIASED TOA SUBSTANTIAL FRACTION OF THE VOLTAGE REQUIRED FOR SELF-BREAK DOWN. THE LASERS CREATE SUFFICIENT ELECTRON HOLE PAIRS IN THE SEMI-INSULATING GALLIUM ARSNEIDE, SO THAT AVALANCHE BREAKDOWN OCCURS. THE GALLIUM ARSENIDE IS THUS SWITCHED FROM A SEMI-INSULATING STATE TOHIGH CONDUCTION. THE AVALANCHE GAIN MECHANISM GREATLY REDUCES THE LASER DRIVE REQUIREMENT OVER THAT REQUIRED BY LINWAR MODE OPTICALLY ACTIVATED DEVICES. THIS AVALANCHE MODE OF OPERATION OF A B BULK SEMICONDUCTOR SWITCH PRODUCES SUBNANOSECOND PULSES. IT IS MORE COMPACT AND MORE ECONOMICAL THAN DEVICES OPERATEDARRAYS. THE DEVICE DESCRIBED WILL PRODUCE 100 PICOSECOND, 1 KV PULSES WITH LOW JITTER AND IS CAPABLE OF OPERATING AT AT A PULSE REPETITION FREQUENCY OF 0.5 KILOHERTZ.

* Information listed above is at the time of submission. *

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