Narrow-Linewidth 1550 Nanometer Laser Oscillator

Award Information
Agency:
Department of Defense
Branch
Defense Advanced Research Projects Agency
Amount:
$98,982.00
Award Year:
2004
Program:
SBIR
Phase:
Phase I
Contract:
W31P4Q-05-C-R058
Award Id:
68864
Agency Tracking Number:
04SB3-0228
Solicitation Year:
n/a
Solicitation Topic Code:
n/a
Solicitation Number:
n/a
Small Business Information
PO Box 8627, Princeton, NJ, 08543
Hubzone Owned:
N
Minority Owned:
N
Woman Owned:
N
Duns:
602750358
Principal Investigator:
Laury Watkins
Director
(609) 584-9696
lwatkins@princetonoptronics.com
Business Contact:
Vince Zumbo
CFO
(609) 584-9696
vzumbo@princetonoptronics.com
Research Institution:
n/a
Abstract
Many DoD applications benefit from coherent detection and processing techniques which require laser linewidths at or below the 1 kHz range and ultra low laser RIN yielding shot noise limited performance at high photocurrents. In addition, many of these applications need higher power of 200mW which is much more than the typical 20mW available with standard semiconductor lasers for telecommunications. Diode-pumped fiber and solid-state lasers, are considered prime candidates for meeting the aggressive laser performance specifications required for many demanding DoD applications . Princeton Optronics has developed a tunable laser based on diode-pumped solid-state technology. The cavity design and gain characteristics have been optimized to deliver a very high performance including high side mode suppression ratio, narrow line width and ultra low RIN. The output power of the standard device is 20mW. The laser design is currently optimized for the telecom applications and has full tuning over the ITU C-band wavelength of 1528-1564nm. Princeton Optronics proposes to improve the power level, linewidth and wavelength stability of the laser by a series of technology improvements including wavelength locker accuracy, gain optimization and thermal and mechanical stabilization. In Phase I of this program the we will develop the design of the narrow linewidth laser oscillator with high power output. To support this design experiments would be performed on the Princeton Optronics laser using an improved locker and control electronics. The power level of the laser will be improved to the level of 80-100mW using innovative thermal design for the pump and the gain medium. Data from the analysis and experiments would be used to show the technology path for the final laser design that would meet the requirements for the program. In phase II, we will design and build lasers with power exceeding 200mW with kHz level of line width and stability.

* information listed above is at the time of submission.

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